RC‑IGBT snapback suppression using silicon germanium collector regions
Vol. 24, No. 10, pp. 1660-1669, Oct. 2024
10.1007/s43236-024-00875-5
Abstract
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Cite this article
[IEEE Style]
T. Y. Yoon, D. G. Park, S. Y. Kim, G. Kim, S. Kim, J. H. Kim, "RC‑IGBT snapback suppression using silicon germanium collector regions," Journal of Power Electronics, vol. 24, no. 10, pp. 1660-1669, 2024. DOI: 10.1007/s43236-024-00875-5.
[ACM Style]
Tae Young Yoon, Dong Gyu Park, Seong Yun Kim, Garam Kim, Sangwan Kim, and Jang Hyun Kim. 2024. RC‑IGBT snapback suppression using silicon germanium collector regions. Journal of Power Electronics, 24, 10, (2024), 1660-1669. DOI: 10.1007/s43236-024-00875-5.