Influence of Device Parameters Spread on Current Distribution of Paralleled Silicon Carbide MOSFETs
Vol. 19, No. 4, pp. 1054-1067, Jul. 2019
10.6113/JPE.2019.19.4.1054
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Current distribution Devices parameters Parallel-connected devices Screening Silicon carbide (SiC) MOSFET
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Cite this article
[IEEE Style]
J. Ke, Z. Zhao, P. Sun, H. Huang, J. Abuogo, X. Cui, "Influence of Device Parameters Spread on Current Distribution of Paralleled Silicon Carbide MOSFETs," Journal of Power Electronics, vol. 19, no. 4, pp. 1054-1067, 2019. DOI: 10.6113/JPE.2019.19.4.1054.
[ACM Style]
Junji Ke, Zhibin Zhao, Peng Sun, Huazhen Huang, James Abuogo, and Xiang Cui. 2019. Influence of Device Parameters Spread on Current Distribution of Paralleled Silicon Carbide MOSFETs. Journal of Power Electronics, 19, 4, (2019), 1054-1067. DOI: 10.6113/JPE.2019.19.4.1054.