Analysis of Switching Clamped Oscillations of SiC MOSFETs
Vol. 18, No. 3, pp. 892-901, May 2018
10.6113/JPE.2018.18.3.892
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Analytical model Current distortion Maximum peak shifting Oscillation frequency Parasitic parameter SiC MOSFET
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Cite this article
[IEEE Style]
J. Ke, Z. Xie, C. Wei, X. Cui, "Analysis of Switching Clamped Oscillations of SiC MOSFETs," Journal of Power Electronics, vol. 18, no. 3, pp. 892-901, 2018. DOI: 10.6113/JPE.2018.18.3.892.
[ACM Style]
Junji Ke, Zongkui Xie, Changjun Wei, and Xiang Cui. 2018. Analysis of Switching Clamped Oscillations of SiC MOSFETs. Journal of Power Electronics, 18, 3, (2018), 892-901. DOI: 10.6113/JPE.2018.18.3.892.