Performance Evaluation of GaN-Based Synchronous Boost Converter under Various Output Voltage, Load Current, and Switching Frequency Operations


Vol. 15, No. 6, pp. 1489-1498, Nov. 2015
10.6113/JPE.2015.15.6.1489


PDF    

 Abstract

Gallium nitride (GaN)-based power switching devices, such as high-electron-mobility transistors (HEMT), provide significant performance improvements in terms of faster switching speed, zero reverse recovery, and lower on-state resistance compared with conventional silicon (Si) metal?oxide?semiconductor field-effect transistors (MOSFET). These benefits of GaN HEMTs further lead to low loss, high switching frequency, and high power density converters. Through simulation and experimentation, this research thoroughly contributes to the understanding of performance characterization including the efficiency, loss distribution, and thermal behavior of a 160-W GaN-based synchronous boost converter under various output voltage, load current, and switching frequency operations, as compared with the state-of-the-art Si technology. Original suggestions on design considerations to optimize the GaN converter performance are also provided.


 Statistics
Show / Hide Statistics

Cumulative Counts from September 30th, 2019
Multiple requests among the same browser session are counted as one view. If you mouse over a chart, the values of data points will be shown.



Cite this article

[IEEE Style]

D. Han and B. Sarlioglu, "Performance Evaluation of GaN-Based Synchronous Boost Converter under Various Output Voltage, Load Current, and Switching Frequency Operations," Journal of Power Electronics, vol. 15, no. 6, pp. 1489-1498, 2015. DOI: 10.6113/JPE.2015.15.6.1489.

[ACM Style]

Di Han and Bulent Sarlioglu. 2015. Performance Evaluation of GaN-Based Synchronous Boost Converter under Various Output Voltage, Load Current, and Switching Frequency Operations. Journal of Power Electronics, 15, 6, (2015), 1489-1498. DOI: 10.6113/JPE.2015.15.6.1489.