An Improved Analytical Model for Predicting the Switching Performance of SiC MOSFETs

Mei Liang; Trillion Q. Zheng; Yan Li

An Improved Analytical Model for Predicting the Switching Performance of SiC MOSFETs

Mei Liang

Trillion Q. Zheng

Yan Li

Vol. 16, No. 1, pp. 374-387, Jan. 2016

10.6113/JPE.2016.16.1.374

Switching performance

PDF

Abstract

This paper derives an improved analytical model to estimate switching loss and analyze the effects of parasitic elements on the switching performance of SiC MOSFETs. The proposed analytical model considers the parasitic inductances, the nonlinearity of the junction capacitances and the nonlinearity of the trans-conductance. The turn-on process and the turn-off process are illustrated in detail, and equivalent circuits are derived and solved for each switching transition. The proposed analytical model is more accurate and matches better with experimental results than other analytical models. Note that switching losses calculated based on experiments are imprecise, because the energy of the junction capacitances is not properly disposed. Finally, the proposed analytical model is utilized to account for the effects of parasitic elements on the switching performance of a SiC MOSFET, and the circuit design rules for high frequency circuits are given.

Statistics

Show / Hide Statistics

Cumulative Counts from September 30th, 2019
Multiple requests among the same browser session are counted as one view. If you mouse over a chart, the values of data points will be shown.

Cite this article

[IEEE Style]

M. Liang, T. Q. Zheng, Y. Li, "An Improved Analytical Model for Predicting the Switching Performance of SiC MOSFETs," Journal of Power Electronics, vol. 16, no. 1, pp. 374-387, 2016. DOI: 10.6113/JPE.2016.16.1.374.

[ACM Style]

Mei Liang, Trillion Q. Zheng, and Yan Li. 2016. An Improved Analytical Model for Predicting the Switching Performance of SiC MOSFETs. Journal of Power Electronics, 16, 1, (2016), 374-387. DOI: 10.6113/JPE.2016.16.1.374.