Development of a Novel 30 kV Solid-state Switch for Damped Oscillating Voltage Testing System

This paper describes the design and development of a novel semiconductor-based solid-state switch for damped oscillating voltage test system. The proposed switch is configured as two identical series-connected switch stacks, each of which comprising 10 series-connected IGBT function units. Each unit consists of one IGBT, a gate driver, and an auxiliary voltage sharing circuit. A single switch stack can block 20 kV-rated high voltage, and two stacks in series are proven applicable to 30 kV-rated high voltage. The turn-on speed of the switch is approximately 250 ns. A flyback topology-based power supply system with a front-end power factor correction is built for the drive circuit by loosely inductively coupling each unit with a ferrite core to the primary side of a power generator to obtain the advantages of galvanic isolation and compact size. After the simulation, measurement, and estimation of the parasitic effect on the gate driver, a prototype is assembled and tested under different operating regimes. Experimental results are presented to demonstrate the performance of the developed prototype.

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Cite this article

[IEEE Style]

Z. Hou, H. Li, J. Li, S. Ji, C. Huang, "Development of a Novel 30 kV Solid-state Switch for Damped Oscillating Voltage Testing System," Journal of Power Electronics, vol. 16, no. 2, pp. 786-797, 2016. DOI: 10.6113/JPE.2016.16.2.786.

[ACM Style]

Zhe Hou, Hongjie Li, Jing Li, Shengchang Ji, and Chenxi Huang. 2016. Development of a Novel 30 kV Solid-state Switch for Damped Oscillating Voltage Testing System. Journal of Power Electronics, 16, 2, (2016), 786-797. DOI: 10.6113/JPE.2016.16.2.786.