Automotive High Side Switch Driver IC for Current Sensing Accuracy Improvement with Reverse Battery Protection

Jaehyun Park; Shihong Park

Automotive High Side Switch Driver IC for Current Sensing Accuracy Improvement with Reverse Battery Protection

Jaehyun Park

Shihong Park

Vol. 17, No. 5, pp. 1372-1381, Sep. 2017

10.6113/JPE.2019.17.5.1372

Automotive current sensing

Automotive power switch driver

Current sensing accuracy

High side gate driver

Reverse battery protection

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Abstract

This paper presents a high-side switch driver IC capable of improving the current sensing accuracy and providing reverse battery protection. Power semiconductor switches used to replace relay switches are encumbered by two disadvantages: they are prone to current sensing errors and they require additional external protection circuits for reverse battery protection. The proposed IC integrates a gate driver and current sensing blocks, thus compensating for these two disadvantages with a single IC. A p-sub-based 90-V 0.13-μm bipolar-CMOS-DMOS (BCD) process is used for the design and fabrication of the proposed IC. The current sensing accuracy (error ≤ ±5% in the range of 0.1 A?6.5 A) and the reverse battery protection features of the proposed IC were experimentally tested and verified.

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Cite this article

[IEEE Style]

J. Park and S. Park, "Automotive High Side Switch Driver IC for Current Sensing Accuracy Improvement with Reverse Battery Protection," Journal of Power Electronics, vol. 17, no. 5, pp. 1372-1381, 2017. DOI: 10.6113/JPE.2019.17.5.1372.

[ACM Style]

Jaehyun Park and Shihong Park. 2017. Automotive High Side Switch Driver IC for Current Sensing Accuracy Improvement with Reverse Battery Protection. Journal of Power Electronics, 17, 5, (2017), 1372-1381. DOI: 10.6113/JPE.2019.17.5.1372.