Review on Gallium Nitride HEMT Device Technology for High Frequency Converter Applications


Vol. 9, No. 1, pp. 36-42, Jan. 2009
10.6113/JPE.2009.9.1.36


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 Abstract

This paper presents the review of an improved high power-high frequency III-V wide bandgap (WBG) semiconductor device, Gallium Nitride (GaN). The device offers better efficiency and thermal management with higher switching frequency and by having higher blocking voltage, GaN can be used for high voltage applications. In addition, the weight and size of passive components on printed circuit board can be reduced substantially when operating at high frequency. In managing proper thermal and gate drive design, GaN power converter is expected to generate higher power density with lower stress compared to its counterparts, Silicon (Si) devices. The main contribution of this work is to provide additional information to young researchers in exploring new approaches based on device’s capability and characteristics in the applications of GaN power converter design.


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Cite this article

[IEEE Style]

N. Z. Yahaya, M. B. K. Raethar, M. Awan, "Review on Gallium Nitride HEMT Device Technology for High Frequency Converter Applications," Journal of Power Electronics, vol. 9, no. 1, pp. 36-42, 2009. DOI: 10.6113/JPE.2009.9.1.36.

[ACM Style]

Nor Zaihar Yahaya, Mumtaj Begam Kassim Raethar, and Mohammad Awan. 2009. Review on Gallium Nitride HEMT Device Technology for High Frequency Converter Applications. Journal of Power Electronics, 9, 1, (2009), 36-42. DOI: 10.6113/JPE.2009.9.1.36.

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  ISSN : 1598 - 2092
eISSN : 2093 - 4718