Realistic Simulations on Reverse Junction Characteristics of SiC and GaN Power Semiconductor Devices

Guannan Wei; Yung C. Liang; Ganesh S. Samudra

Realistic Simulations on Reverse Junction Characteristics of SiC and GaN Power Semiconductor Devices

Guannan Wei

Yung C. Liang

Ganesh S. Samudra

Vol. 12, No. 1, pp. 19-23, Jan. 2012

10.6113/JPE.2012.12.1.19

High voltage p-n junction

SiC/GaN diode simulation

WBG power semiconductor

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Abstract

This paper presents a practical methodology for realistic simulation on reverse characteristics of Wide Bandgap (WBG) SiC and GaN p-n junctions. The adjustment on certain physic-based model parameters, such as the trap density and photo-generation for SiC junction, and impact ionization coefficients and critical field for GaN junction are described. The adjusted parameters were used in Synopsys Medici simulation to obtain a realistic p-n junction avalanche breakdown voltage. The simulation results were verified through benchmarking against independent data reported by others.

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Cite this article

[IEEE Style]

G. Wei, Y. C. Liang, G. S. Samudra, "Realistic Simulations on Reverse Junction Characteristics of SiC and GaN Power Semiconductor Devices," Journal of Power Electronics, vol. 12, no. 1, pp. 19-23, 2012. DOI: 10.6113/JPE.2012.12.1.19.

[ACM Style]

Guannan Wei, Yung C. Liang, and Ganesh S. Samudra. 2012. Realistic Simulations on Reverse Junction Characteristics of SiC and GaN Power Semiconductor Devices. Journal of Power Electronics, 12, 1, (2012), 19-23. DOI: 10.6113/JPE.2012.12.1.19.