Electrical Characteristics and Thermal Reliability of Stacked-SCRs ESD Protection Device for High Voltage Applications

Yong Seo Koo; Dong Su Kim; Jin Woo Eo

Electrical Characteristics and Thermal Reliability of Stacked-SCRs ESD Protection Device for High Voltage Applications

Yong Seo Koo

Dong Su Kim

Jin Woo Eo

Vol. 12, No. 6, pp. 947-953, Nov. 2012

10.6113/JPE.2012.12.6.947

Electro-Static Discharge (ESD)

Holding Voltage

Latch-up

Silicon Controlled Rectifier (SCR)

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Abstract

The latch-up immunity of the high voltage power clamps used in high voltage ESD protection devices is very becoming important in high-voltage applications. In this paper, a stacking structure with a high holding voltage and a high failure current is proposed and successfully verified in 0.18um CMOS and 0.35um BCD technology to achieve the desired holding voltage and the acceptable failure current. The experimental results show that the holding voltage of the stacking structure can be larger than the operation voltage of high-voltage applications. Changes in the characteristics of the stacking structure under high temperature conditions (300K-500K) are also investigated.

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Cite this article

[IEEE Style]

Y. S. Koo, D. S. Kim, J. W. Eo, "Electrical Characteristics and Thermal Reliability of Stacked-SCRs ESD Protection Device for High Voltage Applications," Journal of Power Electronics, vol. 12, no. 6, pp. 947-953, 2012. DOI: 10.6113/JPE.2012.12.6.947.

[ACM Style]

Yong Seo Koo, Dong Su Kim, and Jin Woo Eo. 2012. Electrical Characteristics and Thermal Reliability of Stacked-SCRs ESD Protection Device for High Voltage Applications. Journal of Power Electronics, 12, 6, (2012), 947-953. DOI: 10.6113/JPE.2012.12.6.947.