Estimation of Insulated-gate Bipolar Transistor Operating Temperature: Simulation and Experiment

Ivan Bahun; Viktor Sunde; Zeljko Jakopovic

Estimation of Insulated-gate Bipolar Transistor Operating Temperature: Simulation and Experiment

Ivan Bahun

Viktor Sunde

Zeljko Jakopovic

Vol. 13, No. 4, pp. 729-736, Jul. 2013

10.6113/JPE.2013.13.4.729

IGBT

operating temperature measurement

threshold voltage

temperature-sensitive electrical parameter

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Abstract

Knowledge of a power semiconductor’s operating temperature is important in circuit design and converter control. Designing appropriate circuitry that does not affect regular circuit operation during virtual junction temperature measurement at actual operating conditions is a demanding task for engineers. The proposed method enables virtual junction temperature estimation with a dedicated modified gate driver circuit based on real-time measurement of a semiconductor’s quasi-threshold voltage. A simulation was conducted before the circuit was designed to verify the concept and to determine the basic properties and potential drawbacks of the proposed method.

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Cite this article

[IEEE Style]

I. Bahun, V. Sunde, Z. Jakopovic, "Estimation of Insulated-gate Bipolar Transistor Operating Temperature: Simulation and Experiment," Journal of Power Electronics, vol. 13, no. 4, pp. 729-736, 2013. DOI: 10.6113/JPE.2013.13.4.729.

[ACM Style]

Ivan Bahun, Viktor Sunde, and Zeljko Jakopovic. 2013. Estimation of Insulated-gate Bipolar Transistor Operating Temperature: Simulation and Experiment. Journal of Power Electronics, 13, 4, (2013), 729-736. DOI: 10.6113/JPE.2013.13.4.729.