Impact of snubber parameters on voltage sharing in series‑connected insulated gate bipolar transistors
Vol. 20, No. 4, pp. 1002-1014, Jul. 2020
10.1007/s43236-020-00094-8
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Cite this article
[IEEE Style]
M. Son, T. Lee, S. Kwon, Y. Cho, "Impact of snubber parameters on voltage sharing in series‑connected insulated gate bipolar transistors," Journal of Power Electronics, vol. 20, no. 4, pp. 1002-1014, 2020. DOI: 10.1007/s43236-020-00094-8.
[ACM Style]
Myeongsu Son, Taeyeong Lee, Soyeon Kwon, and Younghoon Cho. 2020. Impact of snubber parameters on voltage sharing in series‑connected insulated gate bipolar transistors. Journal of Power Electronics, 20, 4, (2020), 1002-1014. DOI: 10.1007/s43236-020-00094-8.