Radiated disturbance characteristics of SiC MOSFET module
Vol. 21, No. 2, pp. 494-504, Feb. 2021
10.1007/s43236-020-00187-4
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Cite this article
[IEEE Style]
H. Huang, N. Wang, J. Wu, T. Lu, "Radiated disturbance characteristics of SiC MOSFET module," Journal of Power Electronics, vol. 21, no. 2, pp. 494-504, 2021. DOI: 10.1007/s43236-020-00187-4.
[ACM Style]
Huazhen Huang, Ningyan Wang, Jialing Wu, and Tiebing Lu. 2021. Radiated disturbance characteristics of SiC MOSFET module. Journal of Power Electronics, 21, 2, (2021), 494-504. DOI: 10.1007/s43236-020-00187-4.