A novel multi‑physics field optimization method for GaN HEMT circuit design


Vol. 21, No. 3, pp. 616-623, Mar. 2021
10.1007/s43236-020-00205-5




 Abstract

A device modeling and topology design method suitable for high-power-density and high-temperature applicationare important to develop with the development of devices. A novel multi-physics analysis model based on GaN high electron mobility transistor (HEMT) is proposed in this paper. The coupled electromagnetic and electrothermal model for GaN HEMT is beneficial to simulate a device’s external characteristic waveform affected by different stray parameters in the surrounding. In addition, the proposed method can accurately reflect the switching loss and transient switching process of GaN HEMT.


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Cite this article

[IEEE Style]

R. Zhang, Y. Wang, H. Xu, "A novel multi‑physics field optimization method for GaN HEMT circuit design," Journal of Power Electronics, vol. 21, no. 3, pp. 616-623, 2021. DOI: 10.1007/s43236-020-00205-5.

[ACM Style]

Rui Zhang, Yibo Wang, and Honghua Xu. 2021. A novel multi‑physics field optimization method for GaN HEMT circuit design. Journal of Power Electronics, 21, 3, (2021), 616-623. DOI: 10.1007/s43236-020-00205-5.