A novel multi‑physics field optimization method for GaN HEMT circuit design
Vol. 21, No. 3, pp. 616-623, Mar. 2021
10.1007/s43236-020-00205-5
Abstract
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Cite this article
[IEEE Style]
R. Zhang, Y. Wang, H. Xu, "A novel multi‑physics field optimization method for GaN HEMT circuit design," Journal of Power Electronics, vol. 21, no. 3, pp. 616-623, 2021. DOI: 10.1007/s43236-020-00205-5.
[ACM Style]
Rui Zhang, Yibo Wang, and Honghua Xu. 2021. A novel multi‑physics field optimization method for GaN HEMT circuit design. Journal of Power Electronics, 21, 3, (2021), 616-623. DOI: 10.1007/s43236-020-00205-5.