Low‑loss carrier‑stored IGBT with p‑type Schottky diode‑clamped shielding layer

A novel carrier-stored trench bipolar transistor (CSTBT) with heavily doped carrier-stored layer (CSL) is proposed and investigated by TCAD tools. The voltage of CSL is shielded by a buried p-type layer (P-bury) whose potential is clamped by a p-type Schottky Barrier Diode (pSBD) in series-connection with a PN diode. Hence, the CSL can be heavily doped, and the trade-off between on-state voltage drop (Von) and turn-off loss (Eoff) is substantially improved. Compared with that of a conventional CSTBT with floating P-base (FP-CSTBT), the Eoff of the proposed CSTBT is reduced by 27.9% at Von = 1.1 V. Owing to the shielding effect of the P-bury layer, the saturation current density of the proposed CSTBT is reduced by 52% compared with that of the FP-CSTBT. Consequently, significantly enlarged short-circuit safe operation area is obtained, and the short-circuit withstand time (tsc) is increased to 12.8 s at ultra-low Von (~ 1.1 V).

Statistics

Show / Hide Statistics

Cumulative Counts from September 30th, 2019
Multiple requests among the same browser session are counted as one view. If you mouse over a chart, the values of data points will be shown.

Cite this article

[IEEE Style]

B. Yi, Q. Zhao, Q. Zhang, J. Cheng, H. Huang, Y. Pan, X. Hu, Y. Xiang, "Low‑loss carrier‑stored IGBT with p‑type Schottky diode‑clamped shielding layer," Journal of Power Electronics, vol. 21, no. 8, pp. 1225-1232, 2021. DOI: 10.1007/s43236-021-00265-1.

[ACM Style]

Bo Yi, Qing Zhao, Qian Zhang, JunJi Cheng, HaiMeng Huang, YiLan Pan, XiaoRan Hu, and Yong Xiang. 2021. Low‑loss carrier‑stored IGBT with p‑type Schottky diode‑clamped shielding layer. Journal of Power Electronics, 21, 8, (2021), 1225-1232. DOI: 10.1007/s43236-021-00265-1.