Exploration of switching characteristics of 4H‑SiC floating junction Schottky barrier diodes with stronger blocking voltage capability

Yagong Nan; Genquan Han

Exploration of switching characteristics of 4H‑SiC floating junction Schottky barrier diodes with stronger blocking voltage capability

Yagong Nan

Genquan Han

Vol. 21, No. 10, pp. 1567-1573, Oct. 2021

10.1007/s43236-021-00282-0

4H-SiC

Floating junction Schottky barrier diode

Influence factors

Recovery softness factor

Switching characteristics

Abstract

To promote applications in the field of power electronic devices, the switching characteristics of 4H-SiC Schottky barrier diodes with a floating junction structure were investigated. The rectangular pattern structure was employed as p+- buried layers of the floating junction due to its process convenience. In addition, some low-doped p-- type layers were implanted in the drift region to improve the forward delayed conduction and to speed up the reverse recovery process. Crucial factors, such as the environment temperature, the doping concentrations of the drift region, and the dimensions of floating junction structure, which can have influences on the transient process of a device under certain bias conditions, were studied in detail by numerical simulations. Some results were quantitatively achieved by theoretical analysis. It was found that when retaining a breakdown voltage value of 4.49 kV, a low specific on-resistance of 5.87 mΩ·cm2, and a powerful capacity to carry current, when compared to the steeper reverse recovery of the conventional Schottky barrier diode, fast and soft switching characteristics with a reverse recovery time of 1.187 ns, and a value of 2.94 for the recovery softness factor, were obtained. The obtained results show that the technologic amelioration of the structure of devices can be advantageous in terms of the transient performance of the floating junction Schottky barrier diode and applications.

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Cite this article

[IEEE Style]

Y. Nan and G. Han, "Exploration of switching characteristics of 4H‑SiC floating junction Schottky barrier diodes with stronger blocking voltage capability," Journal of Power Electronics, vol. 21, no. 10, pp. 1567-1573, 2021. DOI: 10.1007/s43236-021-00282-0.

[ACM Style]

Yagong Nan and Genquan Han. 2021. Exploration of switching characteristics of 4H‑SiC floating junction Schottky barrier diodes with stronger blocking voltage capability. Journal of Power Electronics, 21, 10, (2021), 1567-1573. DOI: 10.1007/s43236-021-00282-0.