Exploration of switching characteristics of 4H‑SiC floating junction Schottky barrier diodes with stronger blocking voltage capability
Vol. 21, No. 10, pp. 1567-1573, Oct. 2021
10.1007/s43236-021-00282-0
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4H-SiC Floating junction Schottky barrier diode Influence factors Recovery softness factor Switching characteristics
Abstract
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Cite this article
[IEEE Style]
Y. Nan and G. Han, "Exploration of switching characteristics of 4H‑SiC floating junction Schottky barrier diodes with stronger blocking voltage capability," Journal of Power Electronics, vol. 21, no. 10, pp. 1567-1573, 2021. DOI: 10.1007/s43236-021-00282-0.
[ACM Style]
Yagong Nan and Genquan Han. 2021. Exploration of switching characteristics of 4H‑SiC floating junction Schottky barrier diodes with stronger blocking voltage capability. Journal of Power Electronics, 21, 10, (2021), 1567-1573. DOI: 10.1007/s43236-021-00282-0.