A snapback‑free reverse‑conducting IGBT with multiple extraction channels

Vol. 22, No. 2, pp. 377-382, Feb. 2022


A novel Reverse-Conducting Insulated Gate Bipolar Transistor (RC-IGBT) with Multiple Extraction Channels (MEC) is proposed and investigated. The MEC is characterized by two transistors NPN1 (Nbuffer/Pbarrier/Ncollector), NPN2 (Nbuffer/Pfloat/Npoly) and short Rgap in the collector. The P-Collector, N-Collector, polysilicon and Rgap are shorted together, thus the NPN1, NPN2 and Rgap are parallel with the PNP transistor (Pbody/Nbuffer/Pcollector). At the forward conduction, the unipolar mode is effectively suppressed by the electron barriers P-barrier (the base of the NPN1) and P-float (the base of the NPN2), thus the snapback effect can be completely eliminated. At the turn-off, the electrons are quickly extracted by three channels of the NPN1, NPN2 and Rgap, thus the Eoff can be remarkably decreased. Results show at the same Von of 2.8 V, the Eoff of the MEC RC-IGBT is reduced by 20%, 37%, 45% and 59% compared to AB, FPL, DFS and TOC RC-IGBT, respectively. Therefore the excellent trade-off characteristics with snapback free are achieved.

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Cite this article

[IEEE Style]

W. Chen, X. Lin, S. Li, Y. Huang, Y. Huang, Z. Han, "A snapback‑free reverse‑conducting IGBT with multiple extraction channels," Journal of Power Electronics, vol. 22, no. 2, pp. 377-382, 2022. DOI: 10.1007/s43236-021-00347-0.

[ACM Style]

Weizhong Chen, Xuwei Lin, Shun Li, Yao Huang, Yi Huang, and Zhengsheng Han. 2022. A snapback‑free reverse‑conducting IGBT with multiple extraction channels. Journal of Power Electronics, 22, 2, (2022), 377-382. DOI: 10.1007/s43236-021-00347-0.