Optimized junction temperature fluctuation suppression technique for SiC MOSFETs in a wireless charging system

Ruoyin Wang; Xueliang Huang; Jiacheng Li

Optimized junction temperature fluctuation suppression technique for SiC MOSFETs in a wireless charging system

Ruoyin Wang

Xueliang Huang

Jiacheng Li

Vol. 22, No. 5, pp. 859-869, May 2022

10.1007/s43236-022-00393-2

wireless power transfer

Junction temperature

Variable delay-switch adjustment method (VDAM)

Antisaturation

Abstract

The problem of SiC MOSFET junction temperature fluctuation in wireless charging systems must be addressed immediately. The existing temperature fluctuation suppression technique requires a large number of additional switches and capacitors. This study further optimizes the temperature fluctuation tracking suppression (TFTS) strategy. This method realizes closedloop temperature adjustment and greatly simplifies the system structure. In addition, an optimized TFTS (OTFTS) strategy combined with an optimized proportional–integral–derivative control method is proposed to solve integral saturation and the subsequent control instability phenomenon. Then, a 5.5 kW experimental system is built. Results show that the OTFTS strategy eliminates 17.9 °C junction temperature fluctuation on the basis of reducing the hardware cost. It also has a good dynamic response and junction temperature fluctuation suppression effect.

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Cite this article

[IEEE Style]

R. Wang, X. Huang, J. Li, "Optimized junction temperature fluctuation suppression technique for SiC MOSFETs in a wireless charging system," Journal of Power Electronics, vol. 22, no. 5, pp. 859-869, 2022. DOI: 10.1007/s43236-022-00393-2.

[ACM Style]

Ruoyin Wang, Xueliang Huang, and Jiacheng Li. 2022. Optimized junction temperature fluctuation suppression technique for SiC MOSFETs in a wireless charging system. Journal of Power Electronics, 22, 5, (2022), 859-869. DOI: 10.1007/s43236-022-00393-2.