High dv/dt immunity, high insulation voltage, ultra‑compact, inductive power supply for gate‑drivers of wide‑bandgap semiconductor switches

Jaehong Lee; Junghyeon Roh; Sungmin Kim; Seung-Hwan Lee

High dv/dt immunity, high insulation voltage, ultra‑compact, inductive power supply for gate‑drivers of wide‑bandgap semiconductor switches

Vol. 22, No. 6, pp. 935-946, Jun. 2022

10.1007/s43236-022-00433-x

Common-mode current

Gate-driver circuit

High-voltage isolation

Inductive power transfer

Isolation capacitance

Abstract

The high dv∕dt transient speed of wide-bandgap (WBG) semiconductor switches can generate common-mode current of considerable magnitude, which can distort the gating signals. An isolated power supply is required for gate-driver circuits to prevent the faulty operation of the switches. However, an isolation capacitance of several pF between the gate-driver circuit and the main control circuit induces a common-mode current, which is suffi ciently large to distort the switching signals. In this study, an isolated power supply with a high dv∕dt immunity, ultra-compact size, and high insulation voltage is developed using inductive power transfer (IPT) coils. A parameter design method for a series–parallel compensated IPT system that can achieve a load-independent output voltage is presented. In addition, a novel design for I-core coils is proposed using fi nite element analysis results. An isolation capacitance of 1.6 pF between the primary and secondary coils was achieved over a 4 mm air gap. The dimensions of the IPT coils were 38 × 22 × 15 m m3 . The measured coil-to-coil and DC-to-DC effi ciencies at an output power of 12 W were 95% and 87%, respectively.

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Cite this article

[IEEE Style]

J. Lee, J. Roh, S. Kim, S. Lee, "High dv/dt immunity, high insulation voltage, ultra‑compact, inductive power supply for gate‑drivers of wide‑bandgap semiconductor switches," Journal of Power Electronics, vol. 22, no. 6, pp. 935-946, 2022. DOI: 10.1007/s43236-022-00433-x.

[ACM Style]

Jaehong Lee, Junghyeon Roh, Sungmin Kim, and Seung-Hwan Lee. 2022. High dv/dt immunity, high insulation voltage, ultra‑compact, inductive power supply for gate‑drivers of wide‑bandgap semiconductor switches. Journal of Power Electronics, 22, 6, (2022), 935-946. DOI: 10.1007/s43236-022-00433-x.