A SiC MOSFET‑based parallel multi‑inverter inductive power transfer (IPT) system

Qiang Bo; Lifang Wang; Yuwang Zhang

A SiC MOSFET‑based parallel multi‑inverter inductive power transfer (IPT) system

Qiang Bo

Lifang Wang

Yuwang Zhang

Vol. 22, No. 6, pp. 1047-1057, Jun. 2022

10.1007/s43236-022-00411-3

SiC MOSFET

Inductive power transfer

Power expansion

Drive asynchrony

Circulating current suppression

Compensation network parameter design

Abstract

A parallel multi-inverter inductive power transfer (IPT) system based on SiC MOSFETs is presented to upgrade the power level and to suppress the circulating current. First, the basic principle and a mathematical model of a parallel multi-inverter IPT system are analyzed, and the output current and power for each of the parallel inverters are modeled. Second, the compensation network parameters for the parallel multi-inverter IPT system are confi gured and a cooperative control strategy is given. Third, various circulating loops and zero-voltage-switching (ZVS) operation are studied. Finally, a 1.2 kW IPT system is built for experimental verifi cation. Results obtained with the experimental system demonstrate that the output power ratio for each of the parallel inverters is about 1:2 and all of them achieve ZVS. In addition, the maximum effi ciency of the DC–DC system is measured to be 92.53%, while the circulating current amplitude is only 0.2 A.

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Cite this article

[IEEE Style]

Q. Bo, L. Wang, Y. Zhang, "A SiC MOSFET‑based parallel multi‑inverter inductive power transfer (IPT) system," Journal of Power Electronics, vol. 22, no. 6, pp. 1047-1057, 2022. DOI: 10.1007/s43236-022-00411-3.

[ACM Style]

Qiang Bo, Lifang Wang, and Yuwang Zhang. 2022. A SiC MOSFET‑based parallel multi‑inverter inductive power transfer (IPT) system. Journal of Power Electronics, 22, 6, (2022), 1047-1057. DOI: 10.1007/s43236-022-00411-3.