SOI radiation‑hardened 300 V half‑bridge date driver IC design with high dv/dt noise immunity

Noise immunity is a critical index of high-voltage half-bridge gate driver integrated circuits (IC). Various noise cancelation technologies have been proposed to improve dv/dt noise immunity with sacrifices in terms of area and propagation delay time. Besides, when it is applied to an inductive load, the half-bridge driver is vulnerable to negative surges at the VS terminal, which is the offset ground of the high-side channel. A 300 V half-bridge gate driver IC with noise rejection module is designed in this paper. The noise immunity can be improved to 87.5 V/ns. The VS negative swing region can be extended to − 5.1 V. In addition, the proposed driver IC can work normally at a working frequency of 500 kHz and the delay matching time between the high-side and the low-side is less than 4 ns. The propagation delay time of the high-side channel is measured at 71.6 ns. Furthermore, gamma ray irradiation experimental results show that the proposed structure presents a good radiation tolerance of 100 krad (Si). The presented half-bridge gate driver IC is fabricated with the silicon-on-insulator (SOI) bipolar-CMOS-DMOS (BCD) process, which occupied an area of 1.86 mm2.

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Cite this article

[IEEE Style]

Y. Gao, X. Cai, Z. Han, Y. Tang, L. Ding, R. Xia, M. Gao, F. Zhao, "SOI radiation‑hardened 300 V half‑bridge date driver IC design with high dv/dt noise immunity," Journal of Power Electronics, vol. 23, no. 5, pp. 779-788, 2023. DOI: 10.1007/s43236-022-00570-3.

[ACM Style]

Yuexin Gao, Xiaowu Cai, Zhengsheng Han, Yun Tang, Liqiang Ding, Ruirui Xia, Mali Gao, and Fazhan Zhao. 2023. SOI radiation‑hardened 300 V half‑bridge date driver IC design with high dv/dt noise immunity. Journal of Power Electronics, 23, 5, (2023), 779-788. DOI: 10.1007/s43236-022-00570-3.