Estimation of switching losses considering non‑linear parasitic capacitances of GaN E‑HEMT

Inwon Lee; Dongkwan Yoon; Younghoon Cho

Estimation of switching losses considering non‑linear parasitic capacitances of GaN E‑HEMT

Inwon Lee

Dongkwan Yoon

Younghoon Cho

Vol. 23, No. 8, pp. 1243-1251, Aug. 2023

10.1007/s43236-023-00653-9

Gallium nitride (GaN)

Non-linear

Parasitic capacitance

Switching loss

Curve fitting

Datasheet

Abstract

The power loss estimation of a gallium nitride enhancement-mode high electron mobility transistor (GaN E-HEMT) is necessary to optimize a thermal model of a power conversion system. However, many manufacturers do not provide a switching energy in their datasheets. To estimate switching energy using information provided in the datasheet, the parasitic capacitance of the GaN E-HEMT is utilized. The switching loss of the GaN E-HEMT can be easily obtained with a conventional method. However, this process does not consider nonlinearity of the parasitic capacitance, which results in large errors and makes thermal model optimization impossible. This paper proposes an enhanced switching loss calculation model considering the non-linear parasitic capacitances of a GaN E-HEMT. To obtain accurate switching energy, a second-order exponential function using regression analysis is used to model the non-linear parasitic capacitance of the GaN E-HEMT. A theoretical analysis of the proposed method has been discussed. Then a double pulse test (DPT) has been performed to verify the proposed method. The proposed method almost corresponds to the experimental results within ± 20%, and it provides a simple and intuitive capacitance model.

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Cite this article

[IEEE Style]

I. Lee, D. Yoon, Y. Cho, "Estimation of switching losses considering non‑linear parasitic capacitances of GaN E‑HEMT," Journal of Power Electronics, vol. 23, no. 8, pp. 1243-1251, 2023. DOI: 10.1007/s43236-023-00653-9.

[ACM Style]

Inwon Lee, Dongkwan Yoon, and Younghoon Cho. 2023. Estimation of switching losses considering non‑linear parasitic capacitances of GaN E‑HEMT. Journal of Power Electronics, 23, 8, (2023), 1243-1251. DOI: 10.1007/s43236-023-00653-9.