Complete loss distribution model of GaN HEMTs considering the influence of parasitic parameters
Vol. 24, No. 1, pp. 119-129, Jan. 2024
10.1007/s43236-023-00710-3
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GaN HEMT Loss analysis model Influence of parasitic parameters Loss distribution of the switching process
Abstract
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Cite this article
[IEEE Style]
S. Gao, J. Tian, X. Fu, Y. Li, B. Wang, L. Zhao, "Complete loss distribution model of GaN HEMTs considering the influence of parasitic parameters," Journal of Power Electronics, vol. 24, no. 1, pp. 119-129, 2024. DOI: 10.1007/s43236-023-00710-3.
[ACM Style]
Shengwei Gao, Jinrui Tian, Xiaoyu Fu, Yongxiao Li, Bo Wang, and Lixia Zhao. 2024. Complete loss distribution model of GaN HEMTs considering the influence of parasitic parameters. Journal of Power Electronics, 24, 1, (2024), 119-129. DOI: 10.1007/s43236-023-00710-3.