Passive clamping driver circuit for suppressing positive and negative gate crosstalk in GaN HEMTs

Gallium nitride (GaN) devices switch faster than silicon devices, making them more vulnerable to significant switching oscillations. To reduce the effect of crosstalk in GaN High Electron Mobility Transistor (GaN HEMT)-based bridges, this paper introduces a passive clamp circuit to restrain gate source voltage oscillations. Utilizing resistive and capacitive diodes, as well as diodes and transistors, a bootstrap driving circuit can be established. This circuit forms a low impedance Miller current path from the driving IC to the GaN device, which decreases the impact of both positive and negative crosstalk. Employing resistive and capacitive diodes, as well as diodes and transistors, a bootstrap driving circuit can be established. This circuit creates a low impedance Miller current path from the driving IC to the GaN device, reducing the effects of the positive and negative crosstalk. This method, which mostly uses passive components, simplifies the circuit design in comparison to other passive gate driver methods. Through dual-pulse testing with a GS661008P, its capacity to suppress positive and negative crosstalk in GaN devices has been confirmed.

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Cite this article

[IEEE Style]

S. Qin, T. Cao, F. Chen, Y. Gu, J. Ying, W. Qian, N. Lu, X. Zhang, G. Yang, "Passive clamping driver circuit for suppressing positive and negative gate crosstalk in GaN HEMTs," Journal of Power Electronics, vol. 24, no. 6, pp. 1001-1011, 2024. DOI: 10.1007/s43236-023-00762-5.

[ACM Style]

Shiqing Qin, Tong Cao, Feiyu Chen, Yan Gu, Jiayao Ying, Weiying Qian, Naiyan Lu, Xiangyang Zhang, and Guofeng Yang. 2024. Passive clamping driver circuit for suppressing positive and negative gate crosstalk in GaN HEMTs. Journal of Power Electronics, 24, 6, (2024), 1001-1011. DOI: 10.1007/s43236-023-00762-5.