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Correction method for calculating junction temperature considering parasitic effects in SiC MOSFETs
Fan Liu Mingxing Du Jinliang Yin Chao Dong Ziwei Ouyang
Vol. 23, No. 4, pp. 688-699, Apr. 2023
10.1007/s43236-022-00562-3
Vol. 23, No. 4, pp. 688-699, Apr. 2023
10.1007/s43236-022-00562-3