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Active trench barrier RC‑IGBT with pinch‑off and carrier accumulation effects
Zikai Wei Weizhong Chen Haishi Wang Haifeng Qin Zhengsheng Han
Vol. 24, No. 4, pp. 631-639, Apr. 2024
10.1007/s43236-023-00734-9
Vol. 24, No. 4, pp. 631-639, Apr. 2024
10.1007/s43236-023-00734-9
A lateral superjunction SOI LDMOS with double‑conductive channels
Weizhong Chen Haifeng Qin Xuwei Lin Yi Huang Zhengsheng Han
Vol. 22, No. 4, pp. 694-701, Apr. 2022
10.1007/s43236-022-00387-0
Vol. 22, No. 4, pp. 694-701, Apr. 2022
10.1007/s43236-022-00387-0