사각형입니다.

https://doi.org/10.6113/JPE.2018.18.2.364

ISSN(Print): 1598-2092 / ISSN(Online): 2093-4718



A Passive Lossless Soft-Switching Single Inductor Dual Buck Full-Bridge Inverter


Feng Hong, Yu Wu*, Zunjing Ye**, Baojian Ji**, and Yufei Zhou*


†,*College of Electronic and Information Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing, China

**College of Electrical Engineering and Control Science, Nanjing TECH University, Nanjing, China



Abstract

A novel passive lossless soft-switching single inductor dual buck full-bridge inverter (PLSSIDBFBI) is presented in this paper. To accomplish this, a passive lossless snubber circuit is added to a dual buck full-bridge inverter. Therefore, the advantages of the dual buck full-bridge inverter are included in the proposed inverter, and the inverter has just one filter inductor, which can decrease the system volume and improve the integration. In addition, the passive lossless snubber circuit achieves soft-switching by its own resonance, and all of the energy stored in the passive lossless snubber circuit can be transferred to load. A comparison between eight topologies is performed in this paper, and the analysis shows that the proposed soft-switching inverter topology has high reliability and efficiency. Finally, experimental results obtained with a 1 kW prototype verify the theoretical analysis and demonstrate the prominent characteristics of a reduced switching loss and improved efficiency.


Key words: Dual buck, High efficiency, High reliability, Passive lossless, Single inductor, Soft-switching


Manuscript received Aug. 3, 2017; accepted Oct. 21, 2017

Recommended for publication by Associate Editor Chun-An Cheng.

Corresponding Author: hongfeng@nuaa.edu.cn Tel: +86-025-84892840, Fax: +86-025-84892840, Nanjing University of Aeronautics and Astronautics

*Col. Electron. Inform. Eng., Nanjing Univ. Aeronautics Astronautics, China

**Col. Electrical Eng. Contr. Sci., Nanjing TECH Univ., China



I. INTRODUCTION

In recent years, transformerless photovoltaic (PV) grid- connected inverters have drawn a lot of attention for use in distributed PV power generation systems due to their low cost, compact structure, high reliability and high conversion efficiency [1]-[4]. The study of transformerless PV grid- connected inverters always focuses on optimizing the topology and improving reliability on the premise of guaranteeing the high-efficiency advantage of transformerless PV grid-connected inverters. With the continuous increase in the requirements for conversion efficiency, improving the switching frequency of power switching devices to downsize the filter and improve the power density has become the inevitable choice for transformerless PV grid-connected inverters. However, with the growing demands on the frequency of power electronic equipment, the switching losses of power devices have become an increasingly prominent problem. An efficient approach to solve the switching dissipation problem and to improve system efficiency is to use soft-switching techniques [5], [6]. The concept of the soft switching technique for inverters was first proposed by Dr. Divan [7]. After years of development, they can be classified into resonant link dc–ac inverters, resonant transition dc–ac inverters, and load resonant dc–ac inverters[8]-[10]. Based on the availability of auxiliary switching devices, soft-switching technology can be divided into two categories: active soft-switching and passive soft-switching. The authors of [11] used a coupled-magnetic structure as the auxiliary resonant snubber circuit to achieve zero-voltage switching (ZVS). The auxiliary devices are low current and low cost IGBTs and diodes, which have low conduction and switching losses. The authors of [12]-[14] proposed ZCT-H6-I, ZVT-H6-I and SLF-H6-I active soft- switching transformerless inverters, which were developed from the H6 topology. In these topologies, the switching losses in the switches and diodes have been decreased based on the perfect leakage current suppression performance. The ZVT-HERIC active soft-switching transformerless inverter was presented in [15], by integrating resonant tanks and freewheeling switches. The zero voltage transition (ZVT) for all of the high-frequency switches and auxiliary switches were achieved, which can also alleviate the reverse-recovery problem for all of the diodes and reduce the voltage stress. However, according to an analysis of reliability in [16], the active devices have negative effects on the reliability of the system. In addition, the active soft-switching techniques implemented by adding auxiliary switches or changing the topology have problems in terms of difficult modulation, high voltage or current stress, large number of resonant components and large losses. Therefore, a snubber circuit is the only way to achieve soft switching without active devices. In snubber circuits, the power circuits of main switches are connected in parallel with the capacitive branch or in series with the inductor elements to avoid withstanding high voltage and high current. Thus, passive soft-switching technology based on the snubber circuit has attracted more attention due to its characteristics of no additional auxiliary switches or corresponding control circuits, less additional loss and high reliability. The authors of [17] proposed a soft-switching three-level inverter that reduced the switching losses with very few passive devices. In [18], lossless passive soft- switching properties and synthesis procedures that are appropriate for all PWM converters are introduced. In addition, the full-bridge and half-bridge soft-switching inverter topologies were also deduced to verify the correctness of principle along with its characteristics of the simple structure and low voltage stress.

Another way to increase system efficiency is by using a simple and efficient topology. The dual buck inverter [19] exploited in recent years is different from full-bridge or half-bridge inverters, and the topology is shown in Fig. 1. The inverter has no shoot-through problem or reverse recovery problem of the body diode, which reduces the reverse recovery loss and increases the system efficiency. In order to improve voltage utilization and reduce the voltage stress based on dual buck inverters, the multi-level dual buck inverters including the diode clamped type and flying capacitor type were studied in [19]-[21], and the dual buck full-bridge-type inverters were proposed in [22], [23]. However, conventional dual buck inverters [19]–[23] still have an inherent weakness in terms of requiring two or more inductors, which increases the volume and cost of the system. On the basis of the dual buck topology, a single-inductor dual buck full-bridge inverter was proposed, which preserved the advantages of dual buck inverters [18]–[23]. The voltage reversal bridge structure is used to make the DC input side remove a large voltage divider to increase the DC voltage utilization. In addition, the inverter only uses a single inductor for filtering, which reduces the volume and weight of the system and improves the integration.

According to the above-mentioned ideas, this paper proposes a new topology called the passive lossless soft-switching single inductor dual buck full-bridge inverter (PLSSIDBFBI). This topology retains the advantages of no shoot-through problem, no body diode reverse recovery problem, high input voltage utilization rate and using one filter inductor. The high-frequency main switches realize lossless soft switching by adding snubber circuits, and the snubber circuits have no resistors or switches, which makes the topology simple and system reliability high.


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원본 그림의 이름: $EM0006.emf

Fig. 1. Dual buck half-bridge inverter.



II. OPERATING PRINCIPLE

The topology of the PLSSIDBFBI is shown in Fig. 2. The PLSSIDBFBI has two stages, the preceding stage introduces a full-bridge circuit to achieve commutation of the input voltage, and the second stage performs high-frequency chopping modulation through switches Sa and Sb. In addition, one inductor, two capacitors and three diodes compose a passive lossless snubber circuit. The proposed topology works in the half-cycle mode with a parallel structure constituted by two Buck circuits, where Buck I consists of S2, S3, Sa, D1, L and Cf, and Buck II consists of S1, S4, Sb, D2, L and Cf. The two Buck circuits operate alternately in one power-frequency cycle, where D1 and D2 provide the freewheeling circuit for the inductor current when iL>0 and iL<0.


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원본 그림의 이름: $EM0007.emf

Fig. 2. Passive lossless soft-switching single inductor dual buck full-bridge inverter.


Since the switching frequency, voltage and current applied on switches Sa and Sb are high, the two switches produce considerable switching loss. Therefore, adding passive devices on the power circuits is a dominant solution to decrease the peak voltage and current of the switches and to reduce the switching loss.

Operating waveforms of the PLSSIDBFBI and snubber circuit are shown in Fig. 3 and Fig. 4. The corresponding operating modes are shown in Fig. 5.


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원본 그림의 이름: $EM000e.emf

Fig. 3. Key waveforms of the passive lossless soft-switching dual buck full-bridge inverter.


A. t0-t1

During this stage, iL >0, uo>0. Buck I circuit works in the PWM mode while Buck II is suspended. Two modes are included in the operating process:

1) Working Mode 1: As shown in Fig. 5(a), S1 and S4 are turned off, while S2, S3, Sa and Sb are turned on. The output current iL rises linearly.

During this mode, the voltage and current waveforms of Sa (iSa, uSa) are shown in Fig. 4, in the duration from t0 to t2. As the figure shows, uSa declines rapidly to zero. iSa keeps rising to charge both the load and the series branch (C12-L11-D13-C11) in the snubber circuit. The L11 performances resonant behavior with C11 and C12, and the resonance frequency can be expressed as:

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원본 그림의 이름: CLP00000fb80002.bmp
원본 그림의 크기: 가로 865pixel, 세로 188pixel      (1)


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원본 그림의 이름: $EM000f.emf

Fig. 4. Key waveforms of a snubber circuit.


The currents iSa and iL11 (current through L11) change in accordance with a second order oscillation. In addition, after half of a resonant cycle, iL11 decreases from positive to negative through the zero-crossing point, and D13 becomes reverse-biased at t0, which is the end of the resonant operation. The current through L11 during the resonance can be obtained from:

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원본 그림의 이름: CLP00000fb80003.bmp
원본 그림의 크기: 가로 680pixel, 세로 178pixel    (2)

where, Z0 is the equivalent impedance of L11, C11 and C12; Ui is the input voltage; and there is:

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원본 그림의 이름: CLP00000fb80004.bmp
원본 그림의 크기: 가로 878pixel, 세로 107pixel      (3)

The sum of the voltages across C11 and C12 can be expressed as:

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원본 그림의 이름: CLP00000fb80005.bmp
원본 그림의 크기: 가로 785pixel, 세로 106pixel         (4)

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원본 그림의 이름: CLP00000fb80006.bmp
원본 그림의 크기: 가로 687pixel, 세로 175pixel    (5)

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원본 그림의 이름: CLP00000fb80007.bmp
원본 그림의 크기: 가로 690pixel, 세로 182pixel   (6)

When C11=C12, the voltages across C11 and C12 are both Ui at t1.

2) Working Mode 2: As shown in Fig. 5(b), Sa is turned off, S1 and S4 remain in the turn-off state, while S2, S3 and Sb remain in the turn-on state. D1 is the freewheeling diode that is forward biased to maintain the output current. The output current iL decreases linearly.

During this mode, the voltage and current waveforms of Sa (iSa, uSa) are shown in Fig. 4, in the duration from t2 to t4. At t=t2, iSa decreases. The two parallel branches composed of (C11, D11) and (C12, D12) can be regarded as a parallel connection with the switch S1 through the input voltage Ui. Since the voltages across the capacitors C11 and C12 cannot appear to mutate, the Zero-Voltage-Switching (ZVS) turn-off of Sa can be achieved.

When Sa is turned off softly, C11 and C12 begin to discharge.

uSa rises from zero, and the voltage across Sa can be expressed as:

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원본 그림의 이름: CLP00000fb80008.bmp
원본 그림의 크기: 가로 581pixel, 세로 113pixel        (7)

The discharge process continues until t3, when uC11 and uC12 decline to zero and uS1 rises to Ui.


B. t1-t2

During this stage, iL<0, uo<0. Buck II works in the PWM mode while Buck I is suspended. Two modes are included in the operating process:

3) Working Mode 3: As shown in Fig. 5(c), S1, S4, Sa and Sb are turned on, while S2 is turned off. The output current iL rises linearly.

During this mode, the voltage and current waveforms of Sb (iSb, uSb) are similar to those of Sa, as shown in Fig. 4, from t0 to t2. iSb charges both the load and the series branch (C21 -D23-L22-C22) in the snubber circuit.

4) Working Mode 4: As shown in Fig. 5(d), Sb is turned off, and S2 and S3 remain in the turn-off state, while S1, S4 and Sa remain in the turn-on state. D2 is the freewheeling diode that is forward-biased to maintain the output current. The output current iL decreases linearly.

During this mode, the voltage and current waveforms of Sb (iSb, uSb) are similar to those of Sa, as shown in Fig. 4, from t2 to t4. The two parallel branches composed of (C21, D21) and (C22, D22) can be regarded as being in parallel connection with the switch Sb through the input voltage Ui. The energy stored in the capacitors C21 and C22 is transferred to the load. In addition, the Zero-Voltage-Switching (ZVS) turn-off of Sb can be achieved.


Fig. 5. Operating modes of the passive lossless soft-switching dual buck full bridge inverter. (a) Mode 1. (b) Mode 2. (c) Mode 3. (d) Mode 4.

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원본 그림의 이름: $EM0011.emf

(a)

 

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원본 그림의 이름: $EM0012.emf

(b)

 

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원본 그림의 이름: $EM0013.emf

(c)

 

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원본 그림의 이름: $EM0014.emf

(d)



III. PARAMETER DESIGN OF THE SNUBBER CIRCUIT AND LOSS ANALYSIS


A. Parameter Design of the Snubber Circuit

In case of the specified parameters of the main circuit, the capacitances and inductances in the snubber circuit have a great effect on the operation performance of the topology. Taking Sa as an example, simulation waveforms of the snubber circuit with different capacitances and inductances are shown in Fig. 6 and Fig. 7.


Fig. 6. Simulation waveforms of the snubber circuit with different capacitances. (a) Oscillating current iL11. (b) Capacitor voltage uc11.

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원본 그림의 이름: $EM0015.emf

(a)

 

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원본 그림의 이름: $EM0016.emf

(b)


Fig. 7. Simulation waveforms of the snubber circuit with different inductances. (a) Oscillating current iL11. (b) Capacitor voltage uc11.

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원본 그림의 이름: $EM0017.emf

(a)

 

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원본 그림의 이름: $EM0018.emf

(b)


As shown in Fig. 6(b), the discharging rate of C11 decreases with an increase of C11. In other words, the decreasing rate of uC11 and the increasing rate of uSa both slow down. Therefore, the switch loss of Sa is reduced. However, an increase of C11 increases the current through Sa and oscillating period, which can be seen from Fig. 6(a).

As shown in Fig. 7, the current through Sa decreases with an increase of L11. However, the oscillating period increases.

Consequently, the values of C11,C12 and L11 are direct influence factors for the operation of circuit. In addition, the values are restricted by the current withstand capability and switch-on time of the power switch.

The peak oscillating current of the snubber circuit during the conduction period of Sa can be expressed as:

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원본 그림의 이름: CLP00000fb80009.bmp
원본 그림의 크기: 가로 752pixel, 세로 172pixel           (8)

When Sa is turned on, the current through Sa can be expressed as:

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원본 그림의 이름: CLP00000fb8000a.bmp
원본 그림의 크기: 가로 320pixel, 세로 103pixel        (9)

where, iL is the current through the inductor L, and iL11 is the oscillating current through the inductor L11.

Since the peak oscillating current has the feature of ISamax>IL11max, the value of L11 can be expressed as:

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원본 그림의 이름: CLP00000fb8000b.bmp
원본 그림의 크기: 가로 387pixel, 세로 189pixel     (10)

The values of C11, C12 and L11 are also restricted by the switch-on time of the power switch. In order to ensure that C11 and C12 are charged to Ui, the half resonant process should be finished in the switch-on time of Sa, that is:

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원본 그림의 이름: CLP00000fb8000c.bmp
원본 그림의 크기: 가로 292pixel, 세로 144pixel         (11)

where, ω is the resonant angular frequency, and Tonmin is minimum switch-on time of the power switch.

When C11=C12:

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원본 그림의 이름: CLP00000fb8000d.bmp
원본 그림의 크기: 가로 647pixel, 세로 98pixel     (12)

When the duty ratio of Sa is tiny, the half resonant process cannot be realized. However, the inductor current and the turn-off loss of the power switch are small at this moment. Setting the switching frequency to fS=60 kHz and Tonmin=0.6μs in the experiment, there is TS=6μs.

With the introduction of a snubber circuit, the turn-off loss of the power switch is reduced. However, the conduction loss increases for the oscillating current. Therefore, the influence of the system loss should be taken into consideration to design the parameters of C11, C12 and L11.

In one switching cycle, the turn-off loss of the power switch Sa can be obtained from:

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원본 그림의 이름: CLP00000fb8000e.bmp
원본 그림의 크기: 가로 1411pixel, 세로 169pixel   (13)

where, NS is the switching time of the power switches per cycle, iSa(i) is the current through Sa before the ith turn-off of Sa, Ui(i) is the voltage across Sa before the ith turn-off of Sa, tf(i) is the fall time of Sa before the ith turn-off of Sa, and tfr(i) and UFR(i) are the rise time and forward peak voltage of the diode when it becomes forward-biased for the ith time.

The conduction loss of the power switch Sa can be expressed as:

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원본 그림의 이름: CLP00000fb8000f.bmp
원본 그림의 크기: 가로 1253pixel, 세로 183pixel   (14)

where, TS (i) is the switching period, D(i) is the duty ratio, ion-state(i) is the current through Sa when Sa is turned on for the ith time, and Rds(on)(i) is the on-resistance of Sa.

According to the parameters of the power switch and diode, the increment in the conduction loss of the power switch Sa after adding the snubber circuit can be calculated as:

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원본 그림의 이름: CLP00000fb80010.bmp
원본 그림의 크기: 가로 1323pixel, 세로 196pixel        (15)

The increment in the turn-off loss of the power switch Sa can be obtained as:

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원본 그림의 이름: CLP00000fb80011.bmp
원본 그림의 크기: 가로 1137pixel, 세로 218pixel      (16)

To make the added snubber circuit helpful for decreasing the system loss, the increment of the conduction loss must be less than the increment of the turn-off loss. Accordingly, there is:

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원본 그림의 이름: CLP00000fb80012.bmp
원본 그림의 크기: 가로 1348pixel, 세로 173pixel        (17)

From (8) and (17), equation (18) can be derived as:

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원본 그림의 이름: CLP00000fb80013.bmp
원본 그림의 크기: 가로 1193pixel, 세로 182pixel    (18)


B. Loss Analysis

In general, the total losses of transformerless inverters are composed of the switching and conduction loss of the power switches and power diodes along with the hysteresis loss (그림입니다.
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원본 그림의 크기: 가로 81pixel, 세로 70pixel) and copper loss (그림입니다.
원본 그림의 이름: CLP00000fb80015.bmp
원본 그림의 크기: 가로 68pixel, 세로 64pixel) of the inductors. In the proposed PLSSIDBFBI, the total losses mainly consist of the followings: the four switches in the full-bridge circuit switch only once per power-frequency cycle, the switching loss can be ignored and only the conduction loss needs to be considered. According to the parameter design of the snubber circuit in chapter III, the two high-frequency switches cannot be turned off softly when DT0<0.1. However, only the turn-on loss and conduction loss need to be considered since both the inductor current and the switching loss of the switches are small. To power the diodes, only the turn-off loss and conduction loss need to be considered because in one buck circuit, the turn-on of the high-frequency switches means the turn-off of the corresponding power diodes. Conversely, the turn-off of the power diodes means the turn-off of the high-frequency switches. According to the theoretical loss analysis of inverters in [28], the conduction loss of the switches is shown in equation (14), and the turn-on loss can be expressed as:

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원본 그림의 이름: CLP00000fb80016.bmp
원본 그림의 크기: 가로 1269pixel, 세로 199pixel           (19)

Further, the turn-off loss of the corresponding diodes can be obtained as:

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원본 그림의 크기: 가로 1398pixel, 세로 283pixel      (20)

where, IRM(i) is the peak reverse recovery current of the diode, tr(i) is the rise time of the switch turned on for the ith time, and trr(i) is the reverse recovery time of the diode turned off for the ith time.

The conduction loss of the diodes can be expressed as:

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원본 그림의 크기: 가로 1074pixel, 세로 195pixel        (21)

where, iDon(i) is the current through the diode during the ith switching process, and UF(i) is the forward voltage drop of the diode.

The hysteresis loss of the inductor can be obtained from the improved Steinmets equation:

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원본 그림의 이름: CLP00000fb8001b.bmp
원본 그림의 크기: 가로 594pixel, 세로 96pixel       (22)

where f is the switching frequency, 그림입니다.
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원본 그림의 크기: 가로 93pixel, 세로 62pixel is the amplitude of the magnetic flux density, and α and β are experienced parameters provided by the data sheets of the magnetic core. In addition, there is:

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원본 그림의 이름: CLP00000fb8001c.bmp
원본 그림의 크기: 가로 489pixel, 세로 166pixel           (23)

The copper loss of the inductor is determined by the equivalent resistance 그림입니다.
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원본 그림의 크기: 가로 71pixel, 세로 67pixel of the inductor as:

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원본 그림의 이름: CLP00000fb8001d.bmp
원본 그림의 크기: 가로 691pixel, 세로 155pixel   (24)

where, 그림입니다.
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원본 그림의 크기: 가로 88pixel, 세로 70pixel is the resistivity of the copper wires, 그림입니다.
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원본 그림의 크기: 가로 118pixel, 세로 62pixel is the length of the copper wires, and 그림입니다.
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원본 그림의 크기: 가로 118pixel, 세로 69pixel is the sectional area of the copper wires.

By plugging the prototype parameters of the proposed buck inverter into the above equations, a pie chart of the losses compositions at a full load can be drawn as shown in Fig. 8.


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원본 그림의 이름: CLP00000fb80017.bmp
원본 그림의 크기: 가로 1244pixel, 세로 842pixel

Fig. 8. Losses compositions at a full load.



IV. RELIABILITY ANALYSIS

In addition to efficiency, reliability is another important factor for evaluating a topology. The number of devices has the major influence on system reliability. When this number is reduced, the topology and control method are simplified, and the failure rate becomes smaller. Generally, when compared with active devices, passive devices have a higher reliability.

In order to quantitatively calculate the reliability of the topology, the MIL-HDBK-217 handbook is used for reliability prediction. Based on reliability engineering theory, the reliability RP of a system can be calculated as:

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원본 그림의 이름: CLP00000fb80021.bmp
원본 그림의 크기: 가로 306pixel, 세로 166pixel        (25)

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원본 그림의 이름: CLP00000fb80022.bmp
원본 그림의 크기: 가로 416pixel, 세로 114pixel    (26)

where, Ri is the individual reliability of the involved components, and λpi is the actual failure rate of the device, which is given by:

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원본 그림의 이름: CLP00000fb80023.bmp
원본 그림의 크기: 가로 368pixel, 세로 166pixel     (27)

where, πi is the modifying factors of each device, m is the number of modifying factors, and λb is the basic failure rate of the electronic devices.

Usually, power electronics apparatus are constructed with transistors, diodes, capacitors and inductors. The modifying factors of these devices are listed in Table I.


TABLE I MODIFYING FACTORS

Factors

Switch

Diode

Capacitor

Inductor

πT

 

πQ

πE

πA

 

 

 

πL

 

 

 

πC

 

 

 

πV

 

 

 

πS

 

 

 


As the table shows, the factor πT is related to temperature, which can be calculated by equation (28). The term Tj is the junction temperature for the transistors and diodes, or the hotspot temperature for the inductors and capacitors. It can be estimated by equation (29), where θJA is the junction–ambient thermal resistance, P is the loss dissipated by the device, and TA is the ambient temperature.

The quality factor πQ is a direct influence factor to the failure rate. Many devices are covered by specifications that have several quality levels.

The environment factor πE varies with the operational environment, and it is assumed that when the environment is ground benign (GB), πE=1.

The application factor πA varies with the operational power of the device.

The inductance factor πL varies with the inductor structure. It is assumed that in the case of a fixed inductor structure, πL=1.

The capacitor factor πC varies with the value of the capacitor, which is expressed with microfarads. This factor is expressed in equation (30) where C is the value of the capacitor.

The factor π V varies with the ratio S between the operating voltage and rated voltage across the capacitor. It can be calculated by equation (31).

The factor πS varies with the ratio Vs between the reverse voltage and rated reverse voltage across the diode. In can be calculated by equation (32).

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Under the same rated power, grid voltage and voltage stress, a comparison of several typical hard-switching transformerless inverter topologies and soft-switching transformerless inverter topologies in terms of reliability is conducted. By assuming that the power switches are MOSFETs IRFP460, the power diodes are DSEI60-06A, the input DC bus voltage Ui is equal to 360V, and the ambient temperature TA is 55°C, the factors of the employed devices are listed in Table II, and a comparison of several transformerless PV inverter topologies is shown in Table III.


TABLE II FACTORS OF DEVICES

 

Switch

Diode

Capacitor (1n/450p/0.44μ)

Inductor

λb

0.012

0.025

0.00012

0.0003

πT

3.62

7.56

13.36

 

πQ

8

8

10

1

πE

1

1

1

1

πA

8

 

 

 

πC

 

 

 

1

πCV

 

 

0.20/0.16/0.83

 

πV

 

 

8.59

 

πS

 

0.29

 

 

λp

2.78

0.44

0.028/0.022/0.11

0.0003


TABLE III COMPARISON OF SEVERAL TRANSFORMERLESS PV INVERTER TOPOLOGIES

Items

Hard-switching transformerless inverter

Soft-switching transformerless inverter

H5

H6

HERIC

DBFBFLI [25]

SIDBFBI [24]

SLF-H6-I [14]

ZVT-HERIC [15]

PLSSIDBFBI

Input voltage capacitors

1

1

1

1

1

2

2

1

High-frequency switches

3

2

4

2

2

4

6

2

Low-frequency switches

2

4

2

2

4

4

4

4

Independent diodes

0

2

0

2

2

2

2

8

Filter inductor

2

2

2

2

1

2

2

1

Half-cycle working body diodes

1

0

1

0

0

0

0

0


Comparison results in terms of reliability are shown in Fig. 9. When compared with other hard-switching transformerless inverter topologies, the SIDBFBI topology has only two high-frequency switches, which makes its reliability higher than that of H5-type topologies, H6-type topology and the HERIC-type topology, but slightly lower than that of the DBFBFLI topology. However, only one inductor is adopted in the SIDBFBI topology, which economizes the cost. In addition, the saving part of the AC filter can also decrease the volume and weight of the system. The PLSIDBFBI topology proposed in this paper is constructed based on the SIDBFBI. As shown in Fig. 9(b), when compared with other soft- switching transformerless inverter topologies, the snubber circuit of the PLSIDBFBI has no additional active devices, which simplifies the control strategy, facilitates the testing and improves the system reliability.


Fig. 9. Comparison of reliability. (a) Hard switching. (b) Soft switching.

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V. EXPERIMENTS

An experimental prototype has been built in the laboratory with the listed parameters to further verify the practical operating performance of the proposed inverter: Ui=360VDC, L=600그림입니다.
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원본 그림의 크기: 가로 69pixel, 세로 65pixel, and uo=220VAC/50Hz. The controllable switches (S1~S4, Sa, Sb) use power MOSFETs (IPW65R037C6). The power diodes D1~D2 use DSEI60-06A.

From equations (10) and (12), the capacitances and inductances of the snubber circuit can be obtained as: C11=C12=C21=C22<3.8nF and L11=L22>10μH. For experimental testing, the values are set as: C11=C12=C21=C22=2nF and L11=L22=50그림입니다.
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From equations (15)-(18) the added snubber circuit increases the conduction loss. However, when compared with the turn-off loss, the increased loss has little influence on the system. Taking the practical conditions into account, the parameters of the snubber circuit are taken as IL11max<ILmax.

Experimental waveforms of the proposed PLSIDBFBI are shown in Fig. 10. Fig. 10(a) presents part of the driving voltage waveforms, which verify the validity of the adopted high and low frequency modulation strategy. Output waveforms are illustrated in Fig. 10(b) and Fig. 10(c). Fig. 10 (b) presents output waveforms at a light load (200W), which shows that the relations of the waveforms and phase are in accordance with the theoretical analysis. The output waveforms at a full load (1008W) shown in Fig. 10(c) demonstrate that the output waveforms have better performance than those at a light load. Fig. 11 is a comparison of waveforms of the topology with and without a snubber circuit. With the introduction of a snubber circuit, the voltage approaches zero when the power switch is gated off. Therefore, the turn-off loss of the power switch is decreased. When the power switch is gated on, the capacitor and inductor in the snubber circuit resonate and the energy is stored in the snubber circuit. In addition, when the power switch is gated off, the energy is delivered back to load.


Fig. 10. Experiment waveforms of the passive lossless soft- switching dual buck full bridge inverter.

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Fig. 11. Comparison of experimental waveforms of switches. (a) Experimental waveforms of a switch without a snubber circuit. (b) Experimental waveforms of a switch with a snubber circuit. (c) Experimental waveforms of a switch with a snubber circuit.

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As analyzed above, the zero-voltage turn-off of high- frequency switches is achieved in the proposed PLSSIDBFBI. In addition, the operating efficiency is improved by delivering stored energy back to the input through snubber circuits. A comparison of the efficiency between several typical transformerless inverters and the PLSSIDBFBI is shown in Fig. 12. As shown in Fig. 12(a), when compared with the SIDBFBI, the snubber circuit in the PLSSDBFBI reduces the switching loss and increases the system efficiency. The hard-switching transformerless inverters H6 and HERIC have high efficiencies that are slightly below that of the PLSSDBFBI. However, the previous two inverters possess only a 20 kHz frequency and require a much larger inductor. In addition, as shown in Fig. 12(a), the proposed PLSSIDBFBI produces a higher efficiency at the same frequency when compared with soft-switching SLF-H6-I and ZVT-HERIC. Based on the factors analyzed above, the proposed inverter can achieve both a high efficiency and a decrease in system volume.


Fig. 12. Comparison of efficiency.

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VI. CONCLUSIONS

The novel soft-switching inverter proposed in this paper provides an effective way to increase system efficiency and reliability. According to the above analysis, this inverter has the following features:

1) The advantages of dual buck inverters, such as high conversion efficiency and high reliability, are retrained by the proposed topology. The problems of shoot-through and the reverse recovery of the body diode are removed. In addition, the voltage commutation bridge is adopted to increase the utilization rate of the input voltage and to reduce the voltage stress.

2) When compared with other transformerless inverter topologies, the proposed inverter has only one filter inductor. Therefore, the volume and weight of the system are further decreased, and the integration is more improved.

3) The added snubber circuit realizes lossless soft switching by its own resonance, which simplifies the control strategy, facilitates testing and improves system reliability.



ACKNOWLEDGMENT

This work was supported in part by the Shanghai Aerospace Science and Technology Innovation Fund under Grant SAST2015037, the Natural Science Foundation of Jiangsu Province under Grant BK20140944 and the National Natural Science Foundation of China under Grant 51607086.



REFERENCES

[1] H. Xiao, K. Lan, and L. Zhang, “A quasi-unipolar SPWM full-bridge transformerless PV grid-connected inverter with constant common-mode voltage,” IEEE Trans. Power Electron., Vol. 30, No. 6, pp. 3122-3132, Jun. 2015.

[2] L. Zhang, K. Sun, Y. Xing, and M. Xing, “H6 transformerless full-bridge PV grid-tied inverters,” IEEE Trans. Power Electron., Vol. 29, No. 3, pp. 1229-1238, Mar. 2014.

[3] W. Li, Y. Gu, H. Luo, W. Cui, X. He, and C. Xia, “Topology review and derivation methodology of single- phase transformerless photovoltaic inverters for leakage current suppression,” IEEE Trans. Ind. Electron., Vol. 62, No. 7, pp. 4537-4551, July. 2015.

[4] S. V. Ara´ujo, P. Zacharias, and R. Mallwitz, “Highly efficient single-phase transformerless inverters for grid- connected photovoltaic systems,” IEEE Trans. Ind. Electron., Vol. 57, No. 9, pp. 3118-3128, Sep. 2010.

[5] H. Kim, Y. Chung, K. Lee, Y. Jon, and K. Kim, “Performance analysis of soft-switching inverter for the photovoltaic power system,” in Proc. Int. Conf. Power Electron., Vol. 1, pp. 436-439, Oct. 2007.

[6] F. Liu, J. Yan, and X. Ruan, “Zero-voltage and zero- current-switching PWM combined three-level DC/DC converter,” IEEE Trans. Ind. Electron, Vol. 57, No. 5, pp. 1644-1654, May. 2010.

[7] D. M. Divan, “The resonant DC link converter-a new concept in static power conversion,” IEEE Trans. Ind. Appl., Vol. 25, No. 2, pp. 317-325, Mar/Apr. 1989

[8] Z. Y. Pan and F. L. Luo, “Novel soft-switching inverter for brushless DC motor variable speed drive system,” IEEE Trans. Power Electron., Vol. 19, No. 2, pp. 280-288, Mar. 2004

[9] J. S. Lai, J. Zhang, H. Yu, and H. Kouns, “Source and load adaptive design for a high-power soft-switching inverter,” IEEE Trans. Power Electron., Vol. 21, No. 6, pp. 1667- 1675, Nov. 2006.

[10] Y. P. Li, F. C. Lee, and D. Boroyevich, “A simplified three-phase zero-current-transition inverter with three auxiliary switches,” IEEE Trans. Power Electron., Vol. 18, No. 3, pp. 802-813, May 2003.

[11] B. Chen, “Design and optimization of 99% CEC efficiency soft switching photovoltaic inverter,” in Proc. IEEE Appl. Power Electron. Conf., Vol. 1, pp. 946-951, Mar. 2013.

[12] H. F. Xiao, X. P. Liu, and K. Lan, “Zero-voltage-transition full-bridge topologies for transformerless photovoltaic grid-connected inverter,” IEEE Trans. Ind. Electron., Vol. 61, No. 10, pp. 5393-5401, Oct. 2014

[13] H. F. Xiao, K. Lan, B. Zhou, L. Zhang, and Z. Wu, “A family of zero-current-transition transformerless photovoltaic grid-connected inverter,” IEEE Trans. Power Electron., Vol. 30, No. 6, pp. 3156-3165, Jun. 2015.

[14] H. F. Xiao, L. Zhang, and Y. Li, “An improved zero-current-switching single-phase transformerless PV H6 inverter with switching loss-free,” IEEE Trans. Ind. Electron., Vol. 64, No. 10, pp. 7896-7905, Oct. 2017.

[15] H. F. Xiao, L. Zhang and Y. Li, “A zero-voltage-transition HERIC-type transformerless photovoltaic grid-connected inverter,” IEEE Trans. Ind. Electron., Vol. 64, No. 2, pp. 1222-1232, Feb. 2017.

[16] F. Chan and H. Calleja, “Reliability estimation of three single-phase topologies in grid-connected PV systems,” IEEE Trans. Ind. Electron., Vol. 58, No. 7, pp. 2683-2689, Jul. 2011.

[17] M. W. Gekeler, “Soft switching three level inverter with passive snubber circuit (S3L inverter),” Proc. Eur. Conf. Power Electron. Appl., pp. 1-10, 2011.

[18] K. M. Smith and K. M. Smedley, “Lossless passive soft-switching methods for inverters and amplifiers,” IEEE Trans. Power Electron., Vol. 15, No. 1, pp. 164-173, Jan. 2000.

[19] J. Liu, H. Wang, and Y. Yan, “A novel three level dual buck half bridge inverter,” IEEE Applied Power Electronics Conference, pp. 483-487, 2008.

[20] F. Hong, P. Yin, B. Ji, W. Yang, and C. Wang, “Decoupling control of input voltage balance for diode- clamped dual buck three-level inverter,” IEEE Applied Power Electronics Conference (APEC), pp. 482-488, 2013.

[21] M. Liu, F. Hong, and C. Wang, “A novel flying-capacitor dual buck three-level inverter,” IEEE Applied Power Electronics Conference (APEC), pp. 502-506, 2013.

[22] Z. Yao, L. Xiao, X. Wei, and H. Wang, “Dual-buck full-bridge inverter with SPWM control and single current sensor,” IEEE Conference on Industrial Electronics and Applications, pp. 2154-2158, 2010.

[23] F. Hong, J. Liu, B. Ji, Y. Zhou, J. Wang, and C. Wang, “Interleaved dual buck full-bridge three-level inverter,” IEEE Trans. Power Electron., Vol. 31, No. 2, pp. 964-974, Feb. 2016.

[24] F. Hong, J. Liu, B. Ji, Y. Zhou, J. Wang, and C. Wang, “Single inductor dual buck full-bridge inverter,” IEEE Trans. Ind. Electron., Vol. 62, No. 8, pp. 4869-4877, Aug. 2015.

[25] H. Feng, Y. Jun, Y. Yangguang, S. Renzhong, and W. Huizhen, “A novel dual buck full bridge three-level inverter,” China. Patent 200 610 096 848.4, Nov. 12, 2008.

[26] W.-S. Yu, J.-S. Lai, and H. Qian, “High-efficiency inverter with H6-type configuration for photovoltaic non-isolated ac module applications,” IEEE Applied Power Electronics Conference and Exposition (APEC), pp. 1056-1061, 2010.

[27] P. S. Gotekar, S. P. Muley, D. P. Kothari, and B. S. Umre, “Comparison of full bridge bipolar, H5, H6 and HERIC inverter for single phase photovoltaic systems – A review,” IEEE India Conference (INDICON), pp. 1-6, 2015.

[28] H. Feng, S. Renzhong, W. Huizhen, and Y. Yangguang, “A new analysis and calculation of inverter power loss,” Proceedings of the CSEE, Vol. 28, No. 15, pp. 72-78, 2008.



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Feng Hong was born in Anhui, China, in 1979. He received his B.S., M.S. and Ph.D. degrees in Power Electronics and Power Transmission from the Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing, China, in 2001, 2004 and 2008, respectively. In 2008, he joined the College of Electronic and Information Engineering, NUAA, where he is presently working an Associate Professor. His current research interests include renewable energy generation systems, high-frequency power conversion and multi-level power conversion.


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Yu Wu was born in Jiangsu, China, in 1994. She received her B.S. degree in Information Engineering from the Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing, China, in 2016, where she is presently working towards her M.S. degree in Electronics and Communication Engineering. Her current research interests include high-frequency power conversion.


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Zunjing Ye was born in Jiangsu, China, in 1994. He received his B.S. degree in Electrical Engineering and Control Science from the Nanjing Tech University, Nanjing, China, in 2014, where he is presently working towards his M.S. degree in Electrical Engineering and Control Science. His current research interests include renewable energy generation systems and high-frequency power conversion.


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Baojian Ji received his B.S. degree in Automation Engineering from Nanjing Normal University, Nanjing, China, in 2002; his M.S. degree in Electrical Engineering from the Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing, China, in 2007; and his PH.D. degree from Southeast University, Nanjing, China, in 2012. In 2017, he became an Associate Professor at Nanjing Tech University, Nanjing, China, where he is presently working as the Head of the Department of Electrical Engineering. His current research interests include digital control techniques and the development of grid-tied inverters for renewable energy.


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Yufei Zhou was born in Nanjing, China, in 1984. She received her B.S., M.S. and Ph.D. degrees from the Nanjing University of Aeronautics and Astronautics (NUAA), Nanjing, in 2006, 2009 and 2013, respectively. In 2013, she joined the College of Electric and Information Engineering, NUAA. Her current research interests include renewable energy generation, Z-source converters and integrated power electronics modules.