Improved adaptive active gate driver for IGBTs


Vol. 25, No. 7, pp. 1332-1344, Jul. 2025
10.1007/s43236-025-01057-7




 Abstract

Voltage and current oscillations in the switching transients of IGBTs can affect the safety and electromagnetic compatibility of power converters. To improve the switching performance of IGBTs, this paper proposes an improved adaptive active gate driver (IAAGD). The proposed IAAGD consists of two parts: the totem-poles unit and the logic processing unit. The totempoles unit uses multiple totem-poles in parallel to achieve the switching of the multi-level driving resistance. In the stage where voltage oscillation needs to be suppressed, a large resistance is used, while in other stages, a small resistance is used to optimize the switching loss. The logic processing unit samples the collector-emitter voltage, inductor voltage of the self and complementary IGBTs, which can achieve real-time adaptive oscillation suppression effects under different voltage and current levels. Compared to the conventional gate driver (CGD), IAAGD takes into account the optimization of switching loss. Experimental verification is used to demonstrate the effectiveness of the proposed IAAGD.


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Cite this article

[IEEE Style]

S. Dou, L. Huang, P. Fu, X. Chen, X. Zhang, S. He, Z. Wang, J. Yang, "Improved adaptive active gate driver for IGBTs," Journal of Power Electronics, vol. 25, no. 7, pp. 1332-1344, 2025. DOI: 10.1007/s43236-025-01057-7.

[ACM Style]

Sheng Dou, Liansheng Huang, Peng Fu, Xiaojiao Chen, Xiuqing Zhang, Shiying He, Zejing Wang, and Jian Yang. 2025. Improved adaptive active gate driver for IGBTs. Journal of Power Electronics, 25, 7, (2025), 1332-1344. DOI: 10.1007/s43236-025-01057-7.