GaN‑MOSFET‑based isolated bidirectional DC/DC converter for 7.2 kW EV charging applications with a 150–1000 V output range


Vol. 25, No. 9, pp. 1615-1628, Sep. 2025
10.1007/s43236-025-01146-7




 Abstract

This paper presents the design and implementation of a 7.2 kW isolated bidirectional DC/DC converter featuring gallium nitride (GaN)-based MOSFETs to achieve high efficiency and compact form factor for next-generation electric vehicle (EV) charging systems. The converter accommodates a wide output voltage range from 150 to 1000 V, making it suitable for high-voltage EV battery platforms. GaN-enabled high-frequency switching enhances power density and minimizes the magnetic footprint, whereas transformer-based galvanic isolation ensures operational safety. Bidirectional power flow supports charging and discharging operations, enabling vehicle-to-grid (V2G) and vehicle-to-home (V2H) capabilities. To mitigate switching losses, a soft-switching control strategy is implemented, maintaining high efficiency across a broad load range. Experimental results confirm stable operation, achieving peak efficiencies of 97.22% in charging mode and 96.96% in discharging mode. The proposed converter architecture offers a scalable and efficient solution for future-oriented bidirectional EV charging infrastructure.


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Cite this article

[IEEE Style]

J. Yeom, C. Lim, S. Jeong, I. Lee, "GaN‑MOSFET‑based isolated bidirectional DC/DC converter for 7.2 kW EV charging applications with a 150–1000 V output range," Journal of Power Electronics, vol. 25, no. 9, pp. 1615-1628, 2025. DOI: 10.1007/s43236-025-01146-7.

[ACM Style]

Jeong-Won Yeom, Chang-Min Lim, Seung-Min Jeong, and Il-Oun Lee. 2025. GaN‑MOSFET‑based isolated bidirectional DC/DC converter for 7.2 kW EV charging applications with a 150–1000 V output range. Journal of Power Electronics, 25, 9, (2025), 1615-1628. DOI: 10.1007/s43236-025-01146-7.