High‑performance SiC superjunction MOSFET with integrated high‑k MOS channel diode for optimized switching characteristics and high‑temperature robustness

In this paper, a novel SiC superjunction (SJ) MOSFET with an integrated high-k MOS channel diode (MCD) is proposed and compared to a conventional SiC SJ MOSFET and to a SiC SJ MOSFET with an integrated Schottky barrier diode (SBD) (S-SJ), using TCAD simulation. Both MCDs and SBDs can be used as low-barrier diodes to replace the parasitic P–N junction diode in MOSFETs to address the issue of bipolar degradation. In the proposed structure, HfO2 as an example of a high-k material outperforms SiO2 in resolving the contradiction between third-quadrant performance and reliability. The switching characteristics and high-temperature robustness of the three devices are compared and analyzed. The proposed structure and S-SJ have better-switching characteristics since they both have fewer minority carriers in the epitaxial layer during reverse conduction and lower parasitic capacitance. The reverse recovery charge and switching loss in the proposed structure are reduced by 42% and 62% when compared to the conventional structure. More importantly, short-circuit (SC) and unclamped inductive switching (UIS) tests demonstrate that the proposed structure is more robust at high temperatures than S-SJ, indicating that it has great potential in high-frequency, high-power, and high-temperature applications.

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Cite this article

[IEEE Style]

C. Ding, Y. Guo, Q. Huang, W. Huang, H. Ma, Q. Zhang, "High‑performance SiC superjunction MOSFET with integrated high‑k MOS channel diode for optimized switching characteristics and high‑temperature robustness," Journal of Power Electronics, vol. 26, no. 3, pp. 648-657, 2026. DOI: 10.1007/s43236-025-01096-0.

[ACM Style]

Chengxi Ding, Yun-Duo Guo, Qimin Huang, Wei Huang, Hong-Ping Ma, and Qing-Chun Zhang. 2026. High‑performance SiC superjunction MOSFET with integrated high‑k MOS channel diode for optimized switching characteristics and high‑temperature robustness. Journal of Power Electronics, 26, 3, (2026), 648-657. DOI: 10.1007/s43236-025-01096-0.