Switching behavior model for a SiC MOSFET module based on a finitestate machine

Xinglin Liao; Qi Zhang; Weimin Du; Chao He; Yang Li; Hang Wu

Switching behavior model for a SiC MOSFET module based on a finitestate machine

Vol. 26, No. 3, pp. 670-683, Mar. 2026

10.1007/s43236-025-01268-y

SiC MOSFET

Switching behavior model

Finite-state machine

Abstract

A finite-state machine (FSM) can describe the behavior of complex systems, making it an effective modeling method for semiconductor devices. An FSM-based switching behavior model of a silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET) power module is analyzed in this study. First, the turn-on and -off transients are divided into five stages in accordance with the device characteristics, and the equivalent circuit and state equation for every stage are constructed by considering the physical state of each substate. Then, the characteristics of each substate and the change conditions are summarized. The state equation is implemented using FSM theory. Nonlinear junction capacitance and transconductance are realized during the modeling process. The parasitic parameters of the module are extracted via an S-parameter test using a vector network analyzer. A double-pulse simulation circuit is established using the constructed behavior model. Moreover, an experiment is performed to verify the validity of the proposed model under different voltages, currents, and driving resistors. The comparison results between simulation and test are basically consistent. The proposed model can be used to simulate the dynamic characteristics of a SiC MOSFET under different working conditions.

Statistics

Show / Hide Statistics

Statistics (Past 3 Years)
Multiple requests among the same browser session are counted as one view. If you mouse over a chart, the values of data points will be shown.

Cite this article

[IEEE Style]

X. Liao, Q. Zhang, W. Du, C. He, Y. Li, H. Wu, "Switching behavior model for a SiC MOSFET module based on a finitestate machine," Journal of Power Electronics, vol. 26, no. 3, pp. 670-683, 2026. DOI: 10.1007/s43236-025-01268-y.

[ACM Style]

Xinglin Liao, Qi Zhang, Weimin Du, Chao He, Yang Li, and Hang Wu. 2026. Switching behavior model for a SiC MOSFET module based on a finitestate machine. Journal of Power Electronics, 26, 3, (2026), 670-683. DOI: 10.1007/s43236-025-01268-y.