Implementation and Evaluation of Interleaved Boundary Conduction Mode Boost PFC Converter with Wide Band-Gap Switching Devices

Jinhaeng Jang; Syam Kumar Pidaparthy; Byungcho Choi

Implementation and Evaluation of Interleaved Boundary Conduction Mode Boost PFC Converter with Wide Band-Gap Switching Devices

Jinhaeng Jang

Syam Kumar Pidaparthy

Byungcho Choi

Vol. 18, No. 4, pp. 985-996, Jul. 2018

10.6113/JPE.2018.18.4.985

GaN HEMT

Interleaved boundary conduction mode (BCM) boost PFC converter

Si MOSFET

SiC MOSFET

Wide band-gap switching devices

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Abstract

The implementation and performance evaluation of an interleaved boundary conduction mode (BCM) boost power factor correction (PFC) converter is presented in this paper by employing three wide band-gap switching devices: a super junction silicon (Si) MOSFET, a silicon carbide (SiC) MOSFET and a gallium nitride (GaN) high electron mobility transistor (HEMT). The practical considerations for adopting wide band-gap switching devices to BCM boost PFC converters are also addressed. These considerations include the gate drive circuit design and the PCB layout technique for the reliable and efficient operation of a GaN HEMT. In this paper it will be shown that the GaN HEMT exhibits the superior switching characteristics and pronounces its merits at high-frequency operations. The efficiency improvement with the GaN HEMT and its application potentials for high power density/low profile BCM boost PFC converters are demonstrated.

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Cite this article

[IEEE Style]

J. Jang, S. K. Pidaparthy, B. Choi, "Implementation and Evaluation of Interleaved Boundary Conduction Mode Boost PFC Converter with Wide Band-Gap Switching Devices," Journal of Power Electronics, vol. 18, no. 4, pp. 985-996, 2018. DOI: 10.6113/JPE.2018.18.4.985.

[ACM Style]

Jinhaeng Jang, Syam Kumar Pidaparthy, and Byungcho Choi. 2018. Implementation and Evaluation of Interleaved Boundary Conduction Mode Boost PFC Converter with Wide Band-Gap Switching Devices. Journal of Power Electronics, 18, 4, (2018), 985-996. DOI: 10.6113/JPE.2018.18.4.985.