Loss Analysis and Soft-Switching Behavior of Flyback-Forward High Gain DC/DC Converters with a GaN FET

Compared with Si MOSFETs, the GaN FET has many advantages in a wide band gap, high saturation drift velocity, high critical breakdown field, etc. This paper compares the electrical properties of GaN FETs and Si MOSFETs. The soft-switching condition and power loss analysis in a flyback-forward high gain DC/DC converter with a GaN FET is presented in detail. In addition, a comparison between GaN diodes and Si diodes is made. Finally, a 200W GaN FET based flyback-forward high gain DC/DC converter is established, and experimental results verify that the GaN FET is superior to the Si MOSFET in terms of switching characteristics and efficiency. They also show that the GaN diode is better than the Si diode when it comes to reverse recovery characteristics.

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Cite this article

[IEEE Style]

Y. Li, T. Q. Zheng, Y. Zhang, M. Cui, Y. Han, W. Dou, "Loss Analysis and Soft-Switching Behavior of Flyback-Forward High Gain DC/DC Converters with a GaN FET," Journal of Power Electronics, vol. 16, no. 1, pp. 84-92, 2016. DOI: 10.6113/JPE.2016.16.1.84.

[ACM Style]

Yan Li, Trillion Q. Zheng, Yajing Zhang, Meiting Cui, Yang Han, and Wei Dou. 2016. Loss Analysis and Soft-Switching Behavior of Flyback-Forward High Gain DC/DC Converters with a GaN FET. Journal of Power Electronics, 16, 1, (2016), 84-92. DOI: 10.6113/JPE.2016.16.1.84.