An Excess Carrier Lifetime Extraction Method for Physics-based IGBT Models

Guicui Fu; Peng Xue

An Excess Carrier Lifetime Extraction Method for Physics-based IGBT Models

Guicui Fu

Peng Xue

Vol. 16, No. 2, pp. 778-785, Mar. 2016

10.6113/JPE.2016.16.2.778

Excess carrier lifetime

IGBT

Parameter extraction

2D Sentaurus simulation

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Abstract

An excess carrier lifetime extraction method is derived for physics-based insulated gate bipolar transistor (IGBT) models with consideration of the latest development in IGBT modeling. On the basis of the 2D mixed-mode Sentaurus simulation, the clamp turn-off test is simulated to obtain the tail current. The proposed excess carrier lifetime extraction method is then performed using the simulated data. The comparison between the extracted results and actual lifetime directly obtained from the numerical device model precisely demonstrates the accuracy of the proposed method.

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Cite this article

[IEEE Style]

G. Fu and P. Xue, "An Excess Carrier Lifetime Extraction Method for Physics-based IGBT Models," Journal of Power Electronics, vol. 16, no. 2, pp. 778-785, 2016. DOI: 10.6113/JPE.2016.16.2.778.

[ACM Style]

Guicui Fu and Peng Xue. 2016. An Excess Carrier Lifetime Extraction Method for Physics-based IGBT Models. Journal of Power Electronics, 16, 2, (2016), 778-785. DOI: 10.6113/JPE.2016.16.2.778.