Physical Modeling of SiC Power Diodes with Empirical Approximation

Leobardo Hern; ez; Abraham Claudio; Marco A. Rodriguez; Mario Ponce; Alej; ro Tapia

Physical Modeling of SiC Power Diodes with Empirical Approximation

Vol. 11, No. 3, pp. 381-388, May 2011

10.6113/JPE.2011.11.3.381

Physical Modeling

Silicon Carbide

Simulation Semiconductor

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Abstract

This article presents the development of a model for SiC power diodes based on the physics of the semiconductor. The model is able to simulate the behavior of the dynamics of the charges in the N- region based on the stored charge inside the SiC power diode, depending on the working regime of the device (turn-on, on-state, and turn-off). The optimal individual calculation of the ambipolar diffusion length for every phase of commutation allows for solving the ambipolar diffusion equation (ADE) using a very simple approach. By means of this methodology development a set of differential equations that models the main physical phenomena associated with the semiconductor power device are obtained. The model is developed in Pspice with acceptable simulation times and without convergence problems during its implementation.

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Cite this article

[IEEE Style]

L. Hern, ez, A. Claudio, M. A. Rodriguez, M. Ponce, Alej, r. Tapia, "Physical Modeling of SiC Power Diodes with Empirical Approximation," Journal of Power Electronics, vol. 11, no. 3, pp. 381-388, 2011. DOI: 10.6113/JPE.2011.11.3.381.

[ACM Style]

Leobardo Hern, ez, Abraham Claudio, Marco A. Rodriguez, Mario Ponce, Alej, and ro Tapia. 2011. Physical Modeling of SiC Power Diodes with Empirical Approximation. Journal of Power Electronics, 11, 3, (2011), 381-388. DOI: 10.6113/JPE.2011.11.3.381.