Dynamic Paralleling Behaviors of High Power Trench and Fieldstop IGBTs

Yu Wu; Yaojie Sun; Yandan Lin

Dynamic Paralleling Behaviors of High Power Trench and Fieldstop IGBTs

Yu Wu

Yaojie Sun

Yandan Lin

Vol. 14, No. 4, pp. 788-795, Jul. 2014

10.6113/JPE.2014.14.4.788

Heat Sink

IGBT

Imbalance

Paralleling Application

Temperature

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Abstract

This paper demonstrates the dynamic behaviors of paralleled high power IGBTs using trench and fieldstop technologies. Four IGBTs are paralleled and standard deviation is adopted to represent the imbalance. Experiments are conducted under three different operation conditions and at different temperatures ranging from -25°C to 125°C. The experimental results show that operation at very low and very high temperatures usually aggravates the switching behaviors. There is a trade-off between the balance and the losses at low temperatures. These results can help in the design of heat sinks in paralleling applications confronting very low temperatures.

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Cite this article

[IEEE Style]

Y. Wu, Y. Sun, Y. Lin, "Dynamic Paralleling Behaviors of High Power Trench and Fieldstop IGBTs," Journal of Power Electronics, vol. 14, no. 4, pp. 788-795, 2014. DOI: 10.6113/JPE.2014.14.4.788.

[ACM Style]

Yu Wu, Yaojie Sun, and Yandan Lin. 2014. Dynamic Paralleling Behaviors of High Power Trench and Fieldstop IGBTs. Journal of Power Electronics, 14, 4, (2014), 788-795. DOI: 10.6113/JPE.2014.14.4.788.