600 V p‑type gate‑doped enhancement mode gallium nitride‑based transistors for AC‑to‑DC power factor‑corrected rectifiers operating at 200 kHz
Vol. 22, No. 7, pp. 1219-1230, Jul. 2022
10.1007/s43236-022-00461-7
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Gallium nitride-based transistor Multi-layered ceramic PCB substrate PCB layout design Power factorcorrected rectifier Radiated noise Thermal design
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Cite this article
[IEEE Style]
J. Jang, "600 V p‑type gate‑doped enhancement mode gallium nitride‑based transistors for AC‑to‑DC power factor‑corrected rectifiers operating at 200 kHz," Journal of Power Electronics, vol. 22, no. 7, pp. 1219-1230, 2022. DOI: 10.1007/s43236-022-00461-7.
[ACM Style]
Jinhaeng Jang. 2022. 600 V p‑type gate‑doped enhancement mode gallium nitride‑based transistors for AC‑to‑DC power factor‑corrected rectifiers operating at 200 kHz. Journal of Power Electronics, 22, 7, (2022), 1219-1230. DOI: 10.1007/s43236-022-00461-7.