Review of wide band‑gap technology: power device, gate driver, and converter design

This paper reviewed the state-of-the-art wide band-gap (WBG) technology from material level to system level. The properties of semiconductor materials, i.e., silicon carbide and gallium nitride, were investigated. The electrical characteristics of commercial power devices, which include static and dynamic performances, were assessed, and compared. The design requirements of WBG gate drivers were then underpinned, and various gate driver topologies were reviewed. Finally, their implementation in power electronic converters and performances were evaluated.

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Cite this article

[IEEE Style]

K. Ravinchandra, T. K. S. Freddy, J. Lee, K. Lee, H. A. Mantooth, V. Thiruchelvam, J. I. Y. Y. Xian, "Review of wide band‑gap technology: power device, gate driver, and converter design," Journal of Power Electronics, vol. 22, no. 8, pp. 1398-1413, 2022. DOI: 10.1007/s43236-022-00470-6.

[ACM Style]

Krishna Ravinchandra, Tan Kheng Suan Freddy, June-Seok Lee, Kyo-Beum Lee, Homer Alan Mantooth, Vinesh Thiruchelvam, and Jerome Ignatius Yuen Yi Xian. 2022. Review of wide band‑gap technology: power device, gate driver, and converter design. Journal of Power Electronics, 22, 8, (2022), 1398-1413. DOI: 10.1007/s43236-022-00470-6.