Silicon carbide‑based digitally controlled zero voltage switching dual‑phase interleaved totem‑pole PFC rectifier operating at high frequency


Vol. 23, No. 2, pp. 335-344, Feb. 2023
10.1007/s43236-022-00582-z




 Abstract

An interleaved PFC rectifier reduces ripple current and a bridgeless PFC rectifier eliminates commutation loss. This study presents a dual-phase interleaved bridgeless totem-pole PFC rectifier that takes both the advantages. This rectifier operates in a variable frequency mode while achieving a zero voltage switching operation. In particular, four 650 V silicon carbide (SiC)-based transistors are applied to two boost circuits configured for a dual-phase interleaved operation. Two boost circuits operate at higher switching frequencies above 200 kHz due to the ZVS operation of the SiC-based transistors. A 500 W prototype board is implemented. The design issues of the totem-pole PFC rectifier are highlighted, and the digital control methods are applied to address them. In addition, this work investigates the conducted EMI noise of the circuit that operates with a dual-boost interleaved method at the higher switching frequencies. A single-stage input EMI filter is designed based on the analysis. Lastly, the superior switching characteristics of the SiC-based transistor are confirmed, and the overall performance of the prototype board is evaluated.


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Cite this article

[IEEE Style]

J. Jang, "Silicon carbide‑based digitally controlled zero voltage switching dual‑phase interleaved totem‑pole PFC rectifier operating at high frequency," Journal of Power Electronics, vol. 23, no. 2, pp. 335-344, 2023. DOI: 10.1007/s43236-022-00582-z.

[ACM Style]

Jinhaeng Jang. 2023. Silicon carbide‑based digitally controlled zero voltage switching dual‑phase interleaved totem‑pole PFC rectifier operating at high frequency. Journal of Power Electronics, 23, 2, (2023), 335-344. DOI: 10.1007/s43236-022-00582-z.