MMC‑modified sub‑module structure with double reverse blocking IGBTs

Yiqi Liu; Zhaoyu Duan; Qichao Chen; Bingkun Li; Mingfei Ban; Zhenjie Li

MMC‑modified sub‑module structure with double reverse blocking IGBTs

Vol. 23, No. 3, pp. 434-444, Mar. 2023

10.1007/s43236-022-00550-7

Modular multilevel converter

Sub-module topology

Device withstand voltage

DC fault ride-through cost analysis

Abstract

In high-voltage direct current (HVDC) systems, among the voltage source converters (VSCs), the modular multilevel converter (MMC) is a popular choice for power transmission. Unfortunately, the conventional half-bridge sub-module (SM) cannot deal with DC faults by itself. Thus, improved SM topologies enabling DC fault ride-through are significant. With this in mind, an MMC-modified SM structure is presented with double reverse blocking IGBTs (DRBSM). When all of the IGBTs in an MMC are blocked, the DRBSM can insert two capacitors in series to the fault circuit to rapidly overcome the DC fault. First, the DRBSM topology and working principle are analyzed. Second, the DRBSM control strategy is illustrated. Third, the device withstand voltage, DC fault ride-through, cost, and loss performance of the DRBSM are presented in detail. Finally, according to simulation results, the DRBSM fault ride-through speed is shown to be as fast as the full-bridge SM, and faster than the clamp double SM. In addition, experimental results validate the feasibility of the proposed DRBSM structure.

Statistics

Show / Hide Statistics

Cumulative Counts from September 30th, 2019
Multiple requests among the same browser session are counted as one view. If you mouse over a chart, the values of data points will be shown.

Cite this article

[IEEE Style]

Y. Liu, Z. Duan, Q. Chen, B. Li, M. Ban, Z. Li, "MMC‑modified sub‑module structure with double reverse blocking IGBTs," Journal of Power Electronics, vol. 23, no. 3, pp. 434-444, 2023. DOI: 10.1007/s43236-022-00550-7.

[ACM Style]

Yiqi Liu, Zhaoyu Duan, Qichao Chen, Bingkun Li, Mingfei Ban, and Zhenjie Li. 2023. MMC‑modified sub‑module structure with double reverse blocking IGBTs. Journal of Power Electronics, 23, 3, (2023), 434-444. DOI: 10.1007/s43236-022-00550-7.