Dynamic performance of 6.5 kV SiC MOSFET body diodes and anti‑parallel Schottky barrier diodes
Vol. 23, No. 6, pp. 1028-1040, Jun. 2023
10.1007/s43236-023-00607-1
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Cite this article
[IEEE Style]
Y. Du, X. Tang, X. Wei, S. Sun, F. Yang, Z. Zhao, "Dynamic performance of 6.5 kV SiC MOSFET body diodes and anti‑parallel Schottky barrier diodes," Journal of Power Electronics, vol. 23, no. 6, pp. 1028-1040, 2023. DOI: 10.1007/s43236-023-00607-1.
[ACM Style]
Yujie Du, Xinling Tang, Xiaoguang Wei, Shuai Sun, Fei Yang, and Zhibin Zhao. 2023. Dynamic performance of 6.5 kV SiC MOSFET body diodes and anti‑parallel Schottky barrier diodes. Journal of Power Electronics, 23, 6, (2023), 1028-1040. DOI: 10.1007/s43236-023-00607-1.