Correction: Estimation of switching losses considering non‑linear parasitic capacitances of GaN E‑HEMT

Inwon Lee; Dongkwan Yoon; Younghoon Cho

Correction: Estimation of switching losses considering non‑linear parasitic capacitances of GaN E‑HEMT

Inwon Lee

Dongkwan Yoon

Younghoon Cho

Vol. 23, No. 9, pp. 1447-1447, Sep. 2023

10.1007/s43236-023-00681-5

Corrrection

Abstract

In the original publication of this article, the acknowledgement section contained an erroneous grant number. The corrected acknowledgement section reads as follows: This work was partly supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government (MOTIE) (20212020800020, Development of High Efficiency Power Converter based on Multidisciplinary Design and Optimization Platform), and the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government (MOTIE) (20206910100160, Smart PCS commercialization technology based on modularization of power conversion core elements). The original publication has been corrected.

Statistics

Show / Hide Statistics

Cumulative Counts from September 30th, 2019
Multiple requests among the same browser session are counted as one view. If you mouse over a chart, the values of data points will be shown.

Cite this article

[IEEE Style]

I. Lee, D. Yoon, Y. Cho, "Correction: Estimation of switching losses considering non‑linear parasitic capacitances of GaN E‑HEMT," Journal of Power Electronics, vol. 23, no. 9, pp. 1447-1447, 2023. DOI: 10.1007/s43236-023-00681-5.

[ACM Style]

Inwon Lee, Dongkwan Yoon, and Younghoon Cho. 2023. Correction: Estimation of switching losses considering non‑linear parasitic capacitances of GaN E‑HEMT. Journal of Power Electronics, 23, 9, (2023), 1447-1447. DOI: 10.1007/s43236-023-00681-5.