Systematic study on temperature and time‑varying characteristics of SiC MOSFET static parameters at 200 °C

Xiao Ma; Jianing Wang; Lijian Ding

Systematic study on temperature and time‑varying characteristics of SiC MOSFET static parameters at 200 °C

Xiao Ma

Jianing Wang

Lijian Ding

Vol. 24, No. 2, pp. 269-280, Feb. 2024

10.1007/s43236-023-00711-2

SiC MOSFET

Static characteristics

Parameter characterization

High-temperature resistance device

Recovery characteristics

Abstract

Silicon carbide (SiC) devices can be used in high-temperature conditions due to advancements in packaging technology and manufacturing processes. However, a systematic evaluation of SiC device performances at high temperatures is necessary. First, this study implements a number of static tests on SiC MOSFETs from several manufacturers in environments up to 230 °C to obtain the variation patterns of SiC MOSFET static parameters at different temperatures and to characterize the static properties of SiC MOSFETs at high temperatures. Second, the long-term high-temperature tolerances of 200 °C devices and 175 °C conventional commercial devices are compared. Static test results at different aging stages show that the performance for each device type changes to different degrees at high temperatures. However, these devices have recovery characteristics during the process of cooling to room temperature. Finally, the static parameter characteristics of SiC MOSFETs are summarized in terms of time and temperature to provide a theoretical basis for applying SiC power devices at high temperatures.

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Cite this article

[IEEE Style]

X. Ma, J. Wang, L. Ding, "Systematic study on temperature and time‑varying characteristics of SiC MOSFET static parameters at 200 °C," Journal of Power Electronics, vol. 24, no. 2, pp. 269-280, 2024. DOI: 10.1007/s43236-023-00711-2.

[ACM Style]

Xiao Ma, Jianing Wang, and Lijian Ding. 2024. Systematic study on temperature and time‑varying characteristics of SiC MOSFET static parameters at 200 °C. Journal of Power Electronics, 24, 2, (2024), 269-280. DOI: 10.1007/s43236-023-00711-2.