Loss and efficiency comparisons of single‑phase full‑bridge inverters according to switch structures

So-Jeong Kong; Young-Joo Kim; Jin-Su Kim; Jae-Hyuck Choi; Jun-Young Lee

Loss and efficiency comparisons of single‑phase full‑bridge inverters according to switch structures

Vol. 24, No. 2, pp. 281-291, Feb. 2024

10.1007/s43236-023-00719-8

DC/AC converter

Soft-Switching Inverter

Si-IGBT

Si MOSFET

SiC MOSFET

Abstract

The purpose of this study is to analyze the performances of the single-phase full-bridge inverter according to different switch structures and to propose a cost-effective structure that depends on the operating area of the inverter. The five switch structures considered are: (1) insulated-gate bipolar transistor (IGBT) type, (2) resonance type based on IGBTs, (3) SiC FET type, (4) Si FET type, and 5) hybrid type, using both Si FET and IGBTs. According to each switch structure, the consistency of the analytical formula is verified by theoretical loss analyses, prototype experiments, and comparative analyses. Additionally, by comparing the prices and efficiencies of each structure, a suitable structure can be selected depending on the operating area. For the performance comparisons, 3 kW inverters with direct current (DC) input voltages of 400 V and 700 V and an output voltage of 220 Vac/60 Hz are implemented and tested at switching frequencies of 20 kHz and 40 kHz.

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Cite this article

[IEEE Style]

S. Kong, Y. Kim, J. Kim, J. Choi, J. Lee, "Loss and efficiency comparisons of single‑phase full‑bridge inverters according to switch structures," Journal of Power Electronics, vol. 24, no. 2, pp. 281-291, 2024. DOI: 10.1007/s43236-023-00719-8.

[ACM Style]

So-Jeong Kong, Young-Joo Kim, Jin-Su Kim, Jae-Hyuck Choi, and Jun-Young Lee. 2024. Loss and efficiency comparisons of single‑phase full‑bridge inverters according to switch structures. Journal of Power Electronics, 24, 2, (2024), 281-291. DOI: 10.1007/s43236-023-00719-8.