SiC IGBT degradation mechanism investigation under HV‑H3TRB tests
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Ziming Wu Zongbei Dai Jian Zhou Huafeng Dong Wencan Wang
Feiwan Xie Haoran Wang Jiahui Yan Xiyu Chen Shaohua Yang
Fugen Wu
Vol. 24, No. 2, pp. 305-315, Feb. 2024
10.1007/s43236-023-00726-9
Abstract
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Cite this article
[IEEE Style]
Z. Wu, Z. Dai, J. Zhou, H. Dong, W. Wang, F. Xie, H. Wang, J. Yan, X. Chen, S. Yang, F. Wu, "SiC IGBT degradation mechanism investigation under HV‑H3TRB tests," Journal of Power Electronics, vol. 24, no. 2, pp. 305-315, 2024. DOI: 10.1007/s43236-023-00726-9.
[ACM Style]
Ziming Wu, Zongbei Dai, Jian Zhou, Huafeng Dong, Wencan Wang, Feiwan Xie, Haoran Wang, Jiahui Yan, Xiyu Chen, Shaohua Yang, and Fugen Wu. 2024. SiC IGBT degradation mechanism investigation under HV‑H3TRB tests. Journal of Power Electronics, 24, 2, (2024), 305-315. DOI: 10.1007/s43236-023-00726-9.