Active trench barrier RC‑IGBT with pinch‑off and carrier accumulation effects
Vol. 24, No. 4, pp. 631-639, Apr. 2024
10.1007/s43236-023-00734-9
Abstract
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Cite this article
[IEEE Style]
Z. Wei, W. Chen, H. Wang, H. Qin, Z. Han, "Active trench barrier RC‑IGBT with pinch‑off and carrier accumulation effects," Journal of Power Electronics, vol. 24, no. 4, pp. 631-639, 2024. DOI: 10.1007/s43236-023-00734-9.
[ACM Style]
Zikai Wei, Weizhong Chen, Haishi Wang, Haifeng Qin, and Zhengsheng Han. 2024. Active trench barrier RC‑IGBT with pinch‑off and carrier accumulation effects. Journal of Power Electronics, 24, 4, (2024), 631-639. DOI: 10.1007/s43236-023-00734-9.