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C‑LLC‑LL resonant converter with wide‑gain‑range and low‑stress for hold‑up operation
Xiaochen Ma Ping Wang Zhishuang Wang Bo Li
Vol. 21, No. 9, pp. 1283-1295, Sep. 2021
10.1007/s43236-021-00280-2
Vol. 21, No. 9, pp. 1283-1295, Sep. 2021
10.1007/s43236-021-00280-2
Channel current analysis of GaN HEMTs with source sense pin in DC/DC boost converters
Buket Turan Azizoglu Abdul Balikci Eyup Akpinar Enes Durbaba
Vol. 21, No. 4, pp. 713-723, Apr. 2021
10.1007/s43236-020-00215-3
Vol. 21, No. 4, pp. 713-723, Apr. 2021
10.1007/s43236-020-00215-3
A novel multi‑physics field optimization method for GaN HEMT circuit design
Turn-off modes of silicon carbide MOSFETs for short-circuit fault protection
Jianzhong Zhang Haifu Wu Yaqian Zhang Jin Zhao
Vol. 21, No. 2, pp. 475-482, Feb. 2021
10.1007/s43236-020-00181-w
Vol. 21, No. 2, pp. 475-482, Feb. 2021
10.1007/s43236-020-00181-w
Accurate power sharing and harmonic mitigation scheme for parallel operation of single‑phase voltage source inverters
Design and research of deep slot universal motor for electric power tools
Novel driver circuit for switching performance improvements in SiC MOSFETs
Xianyun Li Yi Lu Xijun Ni Shuzheng Wang Yu Zhang
Xinjie Tang
Vol. 20, No. 6, pp. 1583-1591, Nov. 2020
10.1007/s43236-020-00132-5
Xinjie Tang
Vol. 20, No. 6, pp. 1583-1591, Nov. 2020
10.1007/s43236-020-00132-5
Single‑switch boost converter with extremely high step‑up voltage gain
Yangyang Hao Haibin Li Kai Li Chengqun Fang Xinping Ding
Vol. 20, No. 6, pp. 1375-1385, Nov. 2020
10.1007/s43236-020-00155-y
Vol. 20, No. 6, pp. 1375-1385, Nov. 2020
10.1007/s43236-020-00155-y
Novel switched‑coupled‑inductor quasi‑Z‑source network with enhanced boost capability
Mehran Moslehi Bajestan Mohammad Ali Shamsinejad
Vol. 20, No. 6, pp. 1343-1351, Nov. 2020
10.1007/s43236-020-00128-1
Vol. 20, No. 6, pp. 1343-1351, Nov. 2020
10.1007/s43236-020-00128-1