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Radiated disturbance characteristics of SiC MOSFET module
Huazhen Huang Ningyan Wang Jialing Wu Tiebing Lu
Vol. 21, No. 2, pp. 494-504, Feb. 2021
10.1007/s43236-020-00187-4
Vol. 21, No. 2, pp. 494-504, Feb. 2021
![](https://d2kjln74dkk4oj.cloudfront.net/img/ft_doi.png)
Online monitoring of IGBT junction temperature based on Vce measurement
Han Cao Puqi Ning Xiaoguang Chai Dan Zheng Yuhui Kang
Xuhui Wen
Vol. 21, No. 2, pp. 451-463, Feb. 2021
10.1007/s43236-020-00178-5
Xuhui Wen
Vol. 21, No. 2, pp. 451-463, Feb. 2021
![](https://d2kjln74dkk4oj.cloudfront.net/img/ft_doi.png)
Three‑phase flying‑capacitor MMC with six coupled inductors
Duc Dung Le Dong-Choon Lee Heung-Geun Kim
Vol. 20, No. 4, pp. 916-925, Jul. 2020
10.1007/s43236-020-00099-3
Vol. 20, No. 4, pp. 916-925, Jul. 2020
![](https://d2kjln74dkk4oj.cloudfront.net/img/ft_doi.png)