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Search: "[ keyword: Silicon Carbide (SiC) ]" (4)
Influence of Device Parameters Spread on Current Distribution of Paralleled Silicon Carbide MOSFETs
Junji Ke  Zhibin Zhao  Peng Sun  Huazhen Huang  James Abuogo 
Xiang Cui
Vol. 19, No. 4, pp. 1054-1067, Jul. 2019
10.6113/JPE.2019.19.4.1054
Influence of Parasitic Parameters on Switching Characteristics and Layout Design Considerations of SiC MOSFETs
Haihong Qin  Ceyu Ma  Ziyue Zhu  Yangguang Yan
Vol. 18, No. 4, pp. 1255-1267, Jul. 2018
10.6113/JPE.2018.18.4.1255
A SiC MOSFET Based High Efficiency Interleaved Boost Converter for More Electric Aircraft
Haider Zaman  Xiancheng Zheng  Mengxin Yang  Husan Ali  Xiaohua Wu

Vol. 18, No. 1, pp. 23-33, Jan. 2018
10.6113/JPE.2018.18.1.23
6.6 kW On-Vehicle Charger with a Hybrid Si IGBTs and SiC SBDs Based Booster Power Module
Timothy Junghee Han  Jared Preston  David Ouwerkerk
Vol. 13, No. 4, pp. 584-591, Jul. 2013
10.6113/JPE.2013.13.4.584

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  ISSN : 1598 - 2092
eISSN : 2093 - 4718