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Search: "[ author: Zhengsheng Han ]" (4)
Active trench barrier RC‑IGBT with pinch‑off and carrier accumulation effects
Zikai Wei Weizhong Chen Haishi Wang Haifeng Qin Zhengsheng Han
Vol. 24, No. 4, pp. 631-639, Apr. 2024
10.1007/s43236-023-00734-9
Vol. 24, No. 4, pp. 631-639, Apr. 2024
10.1007/s43236-023-00734-9
SOI radiation‑hardened 300 V half‑bridge date driver IC design with high dv/dt noise immunity
Yuexin Gao Xiaowu Cai Zhengsheng Han Yun Tang Liqiang Ding
Ruirui Xia Mali Gao Fazhan Zhao
Vol. 23, No. 5, pp. 779-788, May 2023
10.1007/s43236-022-00570-3
Ruirui Xia Mali Gao Fazhan Zhao
Vol. 23, No. 5, pp. 779-788, May 2023
10.1007/s43236-022-00570-3
A lateral superjunction SOI LDMOS with double‑conductive channels
Weizhong Chen Haifeng Qin Xuwei Lin Yi Huang Zhengsheng Han
Vol. 22, No. 4, pp. 694-701, Apr. 2022
10.1007/s43236-022-00387-0
Vol. 22, No. 4, pp. 694-701, Apr. 2022
10.1007/s43236-022-00387-0
A snapback‑free reverse‑conducting IGBT with multiple extraction channels
Weizhong Chen Xuwei Lin Shun Li Yao Huang Yi Huang
Zhengsheng Han
Vol. 22, No. 2, pp. 377-382, Feb. 2022
10.1007/s43236-021-00347-0
Zhengsheng Han
Vol. 22, No. 2, pp. 377-382, Feb. 2022
10.1007/s43236-021-00347-0